(PDF) STN18T20 Datasheet - N Channel Enhancement Mode MOSFET

Número de pieza	STN18T20
Descripción	N Channel Enhancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! STN18T20 N Channel Enhancement Mode MOSFET 18.0A DESCRIPTION STN18T20 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching. PIN CONFIGURATION TO-252 FEATURE l 200V/12A, RDS(ON) = 170mΩ(Typ.) @VGS = 10V l Super high density cell design for extremely low RDS(ON) l Exceptional on-resistance and maximum DC current capability l TO-252 package design PART MARKING Y: Year Code A: Date Code Q: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2008, Stanson Corp. STN18T20 2012. V1 1 page

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PDF STN18T20 Data sheet ( Hoja de datos )