(PDF) STP607D Datasheet - P Channel Enhancement Mode MOSFET

Número de pieza	STP607D
Descripción	P Channel Enhancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! STP607D P Channel Enhancement Mode MOSFET -10.0A DESCRIPTION STP607D is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The STP607D has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. PIN CONFIGURATION (D-PAK) TO-252 TO-251 FEATURE -60V/-10.0A, RDS(ON) = 150mΩ（Typ.） @VGS = -10V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability TO-252package design PART MARKING Y: Year Code A: Date Code Q: Process Code STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP607D 2010. V1 1 page TYPICAL CHARACTERICTICS STP607D P Channel Enhancement Mode MOSFET -10.0A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com . STP607D 2010. V1 5 Page

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PDF STP607D Data sheet ( Hoja de datos )