(PDF) STC6602ST6RG Datasheet - Dual N & P Channel Enhancement Mode MOSFET

Número de pieza	STC6602ST6RG
Descripción	Dual N & P Channel Enhancement Mode MOSFET
Fabricantes	Stanson Technology
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No Preview Available ! STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A DESCRIPTION The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required. PIN CONFIGURATION TSOP-6 FEATURE D1 S1 D2 02YW G1 S2 G2 Y: Year A: Week Code ORDERING INFORMATION Part Number Package Part Marking STC6602ST6RG TSOP-6 02YW ※ Week Code Code : A ~ Z ; a ~ z ※ STC6602ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC6602 2007. V1 1 page STC6602 Dual N&P Channel Enhancement Mode MOSFET 2.8A/-2.8A TYPICAL CHARACTERICTICS ( N-Channel ) STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA http://www.stansontech.com STC6602 2007. V1 5 Page

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PDF STC6602ST6RG Data sheet ( Hoja de datos )