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STC6602 の電気的特性と機能

STC6602のメーカーはStanson Technologyです、この部品の機能は「Dual N & P Channel Enhancement Mode MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 STC6602
部品説明 Dual N & P Channel Enhancement Mode MOSFET
メーカ Stanson Technology
ロゴ Stanson Technology ロゴ 




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STC6602 Datasheet, STC6602 PDF,ピン配置, 機能
STC6602
Dual N&P Channel Enhancement Mode
MOSFET
2.8A/-2.8A
DESCRIPTION
The STC6602 is the dual N&P-Channel enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are particularly
suited for low voltage application, such as notebook computer power management and
other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION
TSOP-6
FEATURE
D1 S1 D2
02YW
G1 S2 G2
Y: Year
A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
STC6602ST6RG
TSOP-6
02YW
Week Code Code : A ~ Z ; a ~ z
STC6602ST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC6602 2007. V1

1 Page





STC6602 pdf, ピン配列
STC6602
Dual N&P Channel Enhancement Mode
MOSFET
2.8A/-2.8A
ELECTRICAL CHARACTERISTICS ( Ta = 25Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
V(BR)DSS
VGS(th)
IGSS
VGS=0V,ID=250uA
VGS=0V,ID=-250uA
VDS=VGS,ID=250uA
VDS=VGS,ID=-250uA
VDS=0V,VGS=±20V
N 30
p -30
N1
P1
N
p
V
3
-3
±100
±100
V
nA
Zero Gate Voltage Drain
Current
IDSS
On-State Drain Current
ID(on)
Drain-source On-Resistance RDS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
gfs
VSD
VDS=30V,VGS=0V
VDS=-30V,VGS=0V
VDS=30V,VGS=0V
TJ=55
VDS=-30V,VGS=0V
TJ=55
VDS5V,VGS=10V
VDS-5V,VGS=-10V
VGS=10V,ID=2.8A
VGS=-10V,ID=-2.8A
VGS=4.5V,ID=2.3A
VGS=-4.5V,ID=-2.5A
VDS=10V,ID=2.8A
VDS=-10V,ID=-2.8A
IS=1.25A,VGS=0V
IS=-1.2A,VGS=0V
N1
P -1 uA
N 10
P -10
6A
-6
0.043 0.060
0.088 0.105 Ω
0.056 0.080
0.118 0.135
4.6 S
-4
0.8 1.2 V
-0.8 -1.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg N-Channel N
VDS=15V,VGS=4.5V,
P
Qgs VDS=2.0A
N
P-channel
P
Qgd
VDS=-15V,VGS=-4.5V,
N
VDS=-2.0A
P
4.5 10
5.8 10
nC
0.8
0.8
1.0
1.5
Turn-On Time
Turn-Off Time
Td(on)
tr
Td(off)
tf
N-Channel
VDD=15V, RL=10Ω,
VGEN=10V, RG=3Ω
P-Channel
VDD=-15V, RL=15Ω,
VGEN=-10V, RG=3Ω
N
P
N
P
N
P
N
P
8 20
9 20 nS
12 30
9 20
17 35
18 35
8 20
6 20
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC6602 2007. V1


3Pages


STC6602 電子部品, 半導体
STC6602
Dual N&P Channel Enhancement Mode
MOSFET
2.8A/-2.8A
TYPICAL CHARACTERICTICS ( P-Channel )
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC6602 2007. V1

6 Page



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共有リンク

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部品番号部品説明メーカ
STC6602

Dual N & P Channel Enhancement Mode MOSFET

Stanson Technology
Stanson Technology
STC6602ST6RG

Dual N & P Channel Enhancement Mode MOSFET

Stanson Technology
Stanson Technology


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