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ICE7N60FPのメーカーはIcemosです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。 |
部品番号 | ICE7N60FP |
| |
部品説明 | N-Channel Enhancement Mode MOSFET | ||
メーカ | Icemos | ||
ロゴ | |||
このページの下部にプレビューとICE7N60FPダウンロード(pdfファイル)リンクがあります。 Total 9 pages
ICE7N60FP
ICE7N60FP N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
ID
V(BR)DSS
rDS(on)
Qg
Product Summary
TA=25oC
7A
ID=250uA 600V
VGS=10V
VDS=480V
0.57Ω
23nC
D
G
S
Max
Min
Typ
Typ
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
T0220 Full-PAK
Isolated (T0-220)
Maximum ratings at Tj=25°C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current a
Pulsed drain current a
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25°C
Tc=100°C
Tc=25°C
ID=3.5A
Avalanche current, repetitive
I AR limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=7A,
Tj=125°C
Gate source voltage
Static
VGS
AC (f>1Hz)
Power dissipation
Operating and storage temperature
Mounting torque b
Ptot
Tj, Tstg
Tc=25°C
M 2.5 screws
a Limited by Tjmax
b When mounted on 1inch square 2oz copper clad FR-4
Value
7
4
21
170
3.5
50
±20
±30
35
-55 to +150
50
Unit
A
A
mJ
A
V/ns
V
W
°C
Ncm
SP-7N60FP-000-6
06/27/2014
1
1 Page ICE7N60FP
Parameter
Symbol
Conditions
Gate charge characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
Gate plateau voltage
Vplateau
Reverse Diode
Continuous forward current
IS
Diode forward voltage
VSD
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current Irm
VDS=480 V, ID=7A,
VGS=0 to 10 V
VGS=0V
VGS=0V, IS=IF
VRR=100V, IS=IF,
diFIdt=100 A/µS
Values
Unit
Min Typ Max
- 4.2 -
- 9.0 - nC
- 23 -
- 5.8 -
V
- - 7A
- 0.9 1.2 V
- 231 -
ns
- 2.6 - µC
- 22 -
A
10
9
8
7
6
5
4
3
2
1
0
0
Output Characteristics
VGS=7 thru 20V
6V
5V
2468
VDS - Drain-to-Source Voltage (V)
10
Transfer Characteristics
14
12
10
8
6
4 TJ = 125˚C
2 25˚C
-55˚C
0
0 1 2 3 4 5 6 7 8 9 10
VGS - Gate-to-Source (V)
SP-7N60FP-000-6
06/27/2014
3
3Pages ICE7N60FP
SP-7N60FP-000-6
06/27/2014
6
6 Page | |||
ページ | 合計 : 9 ページ | ||
|
PDF ダウンロード | [ ICE7N60FP データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
ICE7N60FP | N-Channel Enhancement Mode MOSFET | Micross Components |
ICE7N60FP | N-Channel Enhancement Mode MOSFET | Icemos |