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ICE60N150FPのメーカーはMicross Componentsです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。 |
部品番号 | ICE60N150FP |
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部品説明 | N-Channel Enhancement Mode MOSFET | ||
メーカ | Micross Components | ||
ロゴ | |||
このページの下部にプレビューとICE60N150FPダウンロード(pdfファイル)リンクがあります。 Total 4 pages
ICE60N150FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
25A
650V
0.13Ω
85nC
Pin Description:
TO-220
G
Max
Min
Typ
Typ
D
S
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
25
75
690
6
50
±20
±30
35
-55 to +150
50
A
A
mJ
A
V/ns
V
W
°C
Ncm
TC = 25°C
TC = 25°C
ID = 6A
Limited by Tjmax
VDS = 480V, ID = 25A, Tj = 125°C
Static
AC (f>Hz)
TC = 25°C
M 2.5 screws
Symbol Parameter
Values
Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
RthJA Thermal Resistance, Junction to Ambient
Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
- - 3.5
- - 72
- - 260
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
650 675 -
2.5 3 3.5
- 0.1 1
- - 100
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
- - 100
- 0.13 0.15
- 0.40 -
RGS Gate Resistance
-4-
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 650V, VGS = 0V, Tj = 25°C
VDS = 650V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
Ω VGS = 10V, ID = 13A, Tj = 25°C
VGS = 10V, ID = 13A, Tj = 150°C
Ω f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
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1 Page ICE60N150FP
70
60
50
40
30
20
10
0
0
Output Characteristics
VGS = 10V to 7V
6V
5V
5 10 15
VDS - Drain to Source Voltage (V)
20
70
60
50
40
30
20
10
0
0
Transfer Characterstics
TJ = 150°C
25°C
2 468
VGS - Gate to Source Voltage (V)
10
350
300
250
200
150
100
50
0
0
On State Resistance vs Drain Current
VGS = 10V
10 20 30 40 50 60 70
ID - Drain Current (A)
On Resistance vs Junction Temperature
4.0
3.5
3.0 VGS = 10V
ID = 13A
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
10
9
8
7
6
5
4
3
2
1
00
Gate Charge
VDS = 480V
ID = 25A
20 40 60 80
Qg - Total Gate Charge (nC)
100
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
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3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ ICE60N150FP データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
ICE60N150FP | N-Channel Enhancement Mode MOSFET | Icemos |
ICE60N150FP | N-Channel Enhancement Mode MOSFET | Micross Components |