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ICE60N130FPのメーカーはMicross Componentsです、この部品の機能は「N-Channel Enhancement Mode MOSFET」です。 |
部品番号 | ICE60N130FP |
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部品説明 | N-Channel Enhancement Mode MOSFET | ||
メーカ | Micross Components | ||
ロゴ | |||
このページの下部にプレビューとICE60N130FPダウンロード(pdfファイル)リンクがあります。 Total 4 pages
ICE60N130FP
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
23A
650V
0.13Ω
82nC
Pin Description:
TO-220
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
23
82
690
11.5
50
±20
±30
35
-55 to +150
50
A
A
mJ
A
V/ns
V
W
°C
Ncm
TC = 25°C
TC = 25°C
ID = 11.5A
Limited by Tjmax
VDS = 480V, ID = 23A, Tj = 125°C
Static
AC (f>Hz)
TC = 25°C
M 2.5 screws
Max
Min
Typ
Typ
D
S
Symbol Parameter
Values
Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
RthJA Thermal Resistance, Junction to Ambient
Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
- - 2.5
- - 72
- - 260
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
600 650 -
2.5 3 3.5
- 0.1 1
- - 100
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
- - 100
- 0.13 0.15
- 0.4 -
RGS Gate Resistance
-4-
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 600V, VGS = 0V, Tj = 25°C
VDS = 600V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
Ω VGS = 10V, ID = 11.5A, Tj = 25°C
VGS = 10V, ID = 11.5A, Tj = 150°C
Ω f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
1
1 Page ICE60N130FP
80
70
60
50
40
30
20
10
0
0
Output Characteristics
Transfer Characterstics
VGS = 10V to 7V
80
70
60
6V 50
40
30
5V 20
10
TJ = 150°C
25°C
0
5
10 15
0 2 4 6 8 10
VDS - Drain to Source Voltage (V)
VGS - Gate to Source Voltage (V)
On State Resistance vs Drain Current
500
400
300
VGS = 10V
200
On Resistance vs Junction Temperature
4.0
3.5
3.0
VGS = 10V
ID = 11.5A
2.5
2.0
1.5
1.0
100
0.5
0
0 10 20 30 40 50 60 70 80
ID - Drain Current (A)
0.0
-50 -25
0 25 50 75 100 125 150
TJ - Junction Temperature (°C)
10
9
8
7
6
5
4
3
2
1
0
0
Gate Charge
VDS = 480V
ID = 23A
20 40
60
Qg - Total Gate Charge (nC)
80
100
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
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3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ ICE60N130FP データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
ICE60N130FP | N-Channel Enhancement Mode MOSFET | Icemos |
ICE60N130FP | N-Channel Enhancement Mode MOSFET | Micross Components |