ICE11N70 Datasheet PDF - Micross Components
| Part Number | ICE11N70 | |
| Description | N-Channel Enhancement Mode MOSFET | |
| Manufacturers | Micross Components | |
| Logo |  |
|
|
There is a preview and ICE11N70 download ( pdf file ) link at the bottom of this page. Total 4 Pages | ||
Preview 1 page No Preview Available !
ICE11N70
N-Channel Enhancement Mode MOSFET
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Product Summary
ID
V(BR)DSS
rDS(ON)
Qg
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
11A
700V
0.20Ω
85nC
Pin Description:
G
TO-220
Max
Min
Typ
Typ
D
S
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
11
33
280
7.5
50
±20
±30
108
-55 to +150
60
A
A
mJ
A
V/ns
V
W
°C
Ncm
TC = 25°C
TC = 25°C
ID = 7.5A
Limited by Tjmax
VDS = 480V, ID = 11A, Tj = 125°C
Static
AC (f>Hz)
TC = 25°C
M 3 & 3.5 screws
Symbol Parameter
Values
Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
RthJA Thermal Resistance, Junction to Ambient
Tsold Soldering Temperature, Wave Soldering Only
Allowed At Leads
- - 0.6
- - 62
- - 260
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
700 740 -
2.5 3 3.5
- 0.1 1
- - 100
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
- - 100
- 0.20 0.25
- 0.53 -
RGS Gate Resistance
- 4.3 -
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 700V, VGS = 0V, Tj = 25°C
VDS = 700V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
Ω VGS = 10V, ID = 5.5A, Tj = 25°C
VGS = 10V, ID = 5.5A, Tj = 150°C
Ω f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
1
|
| |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for ICE11N70 electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ ICE11N70.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| ICE11N70 | The function is N-Channel Enhancement Mode MOSFET. Icemos |  |
| ICE11N70 | The function is N-Channel Enhancement Mode MOSFET. Micross Components | |
| ICE11N70FP | The function is N-Channel Enhancement Mode MOSFET. Icemos | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
ICE1
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||