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Número de pieza | ICE10N60FP | |
Descripción | N-Channel Enhancement Mode MOSFET | |
Fabricantes | Micross Components | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de ICE10N60FP (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! ICE10N60FP
N-Channel Enhancement Mode MOSFET
ID
V(BR)DSS
rDS(ON)
Qg
Product Summary
TA = 25°C
ID = 250uA
VGS = 10V
VDS = 480V
10A
600V
0.28Ω
41nC
Max
Min
Typ
Typ
Features:
r Low DS(on)
Ultra Low Gate Charge
High dv/dt Capability
High Unclamped Inductive Switching (UIS) Capability
High Peak Current Capability
Increased Transconductance Performance
Optimized Design For High Performance Power Systems
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
ID
ID, pulse
EAS
IAR
dv/dt
Continous Drain Current
Pulsed Drain Current
Avalanche Energy, Single Pulse
Avalanche Current, Repetitive
MOSFET dv/dt Ruggedness
VGS
Ptot
Tj, Tstg
Gate Source Voltage
Power Dissipation
Operating and Storage Temperature
Mounting Torque
Pin Description:
TO-220
G
Value
10
30
340
5
50
±20
±30
35
-55 to +150
50
Unit
A
A
mJ
A
V/ns
V
W
°C
Ncm
Conditions
TC = 25°C
TC = 25°C
ID = 8.3A
Limited by Tjmax
VDS = 480V, ID = 10A, Tj = 125°C
Static
AC (f>Hz)
TC = 25°C
M 2.5 screws
D
S
Symbol Parameter
Values
Min Typ Max
Unit Conditions
Thermal Characteristics
RthJC Thermal Resistance, Junction to Case
- - 3.5
RthJA Thermal Resistance, Junction to Ambient
- - 80
Tsold Soldering Temperature, Wave Soldering Only Al- - - 260
lowed At Leads
Electrical Characteristics @ Tj = 25°C, Unless Otherwise Specified
Static Characteristics
V(BR)DSS
VGS(th)
IDSS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
600 630 -
2.1 3 3.9
- 0.1 1
- - 100
IGSS
RDS(on)
Gate Source Leakage Current
Drain to Source On-State Resistance
- - 100
- 0.28 0.33
- 0.75 -
RGS Gate Resistance
-5-
°C/W
°C
Leaded
1.6mm (0.063in.) from Case for 10s
V VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
µA VDS = 600V, VGS = 0V, Tj = 25°C
VDS = 600V, VGS = 0V, Tj = 150°C
nA VGS = ±20v, VDS = 0V
Ω VGS = 10V, ID = 5A, Tj = 25°C
VGS = 10V, ID = 5A, Tj = 150°C
Ω f = 1 MHz, open drain
Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: [email protected]
1
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet ICE10N60FP.PDF ] |
Número de pieza | Descripción | Fabricantes |
ICE10N60FP | N-Channel Enhancement Mode MOSFET | Micross Components |
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