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AP10N70RのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。 |
部品番号 | AP10N70R |
| |
部品説明 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP10N70Rダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Advanced Power
Electronics Corp.
▼ 100% Avalanche Test
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
AP10N70R/P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
600V
RDS(ON)
0.6Ω
G ID 10A
S
Description
AP10N70 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.Both TO-220
and TO-262 type provide high blocking voltage to overcome voltage surge
and sag in the toughest power system with the best combination of fast
switching,ruggedized design and cost-effectiveness.
G
D
S
The TO-220 and TO-262 package is widely preferred for commercial-
industrial applications. The device is suited for switch mode power supplies,
DC-AC converters and high current high speed switching circuits.
G
DS
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
600
± 30
10
6.3
40
174
1.39
50
10
-55 to 150
-55 to 150
TO-262(R)
TO-220(P)
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
0.72
62
Unit
℃/W
℃/W
Data & specifications subject to change without notice
201022073-1/4
1 Page 20
T C =25 o C
16
12
10V
6.0V
5.0V
8
4.5V
4
V G =4.0V
0
0 5 10 15 20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1.3
1.2
1.1
1
0.9
0.8
-50 0 50 100
T j , Junction Temperature ( o C)
150
Fig 3. Normalized BVDSS v.s. Junction
Temperature
10
T j = 150 o C
1
T j = 25 o C
0.1
0
0.2 0.4 0.6 0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
AP10N70P/R
16
T C =150 o C
12
8
4
10V
6.0V
5.0V
4.5V
V G = 4.0V
0
0 10 20 30 40
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
3.2
I D =5A
2.8 V G =10V
2.4
2
1.6
1.2
0.8
25 50 75 100 125
T j , Junction Temperature ( o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
150
1.2
1
0.8
0.6
0.4
-50
0
50 100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3/4
3Pages ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
E
φ L1
L2
L5
A
D
L4
b1
L3
L
SYMBOLS
Millimeters
MIN NOM MAX
A 4.25 4.48 4.70
b 0.65 0.80 0.90
c1
b1 1.15 1.38 1.60
c 0.40 0.50 0.60
c1 1.00 1.20 1.40
E 9.70 10.00 10.40
E1 --- --- 11.50
e ---- 2.54 ----
L 12.70 13.60 14.50
L1 2.60 2.80 3.00
L2 1.00 1.40 1.80
L3 2.6 3.10 3.6
L4 14.70 15.50 16
L5 6.30 6.50 6.70
φ 3.50 3.60 3.70
D 8.40 8.90 9.40
b
e
c
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
Part Marking Information & Packing : TO-220
LOGO
10N70R
YWWSSS
Part Number
Package Code
Date Code (YWWSSS)
Y:Last Digit Of The Year
WW:Week
SSS:Sequence
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ AP10N70R データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP10N70I-A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP10N70I-A-HF | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP10N70P | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | Advanced Power Electronics |
AP10N70P-A | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | A-POWER |