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SSF2814EH2 の電気的特性と機能

SSF2814EH2のメーカーはSilikron Semiconductorです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 SSF2814EH2
部品説明 MOSFET ( Transistor )
メーカ Silikron Semiconductor
ロゴ Silikron Semiconductor ロゴ 




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SSF2814EH2 Datasheet, SSF2814EH2 PDF,ピン配置, 機能
Main Product Characteristics:
VDSS
RDS(on)
ID
20V
14mΩ (typ.)
8A
Features and Benefits:
TSSOP-8
Advanced MOSFET process technology
Ultra low on-resistance with low gate charge
High Power and current handing capability
150operating temperature
G/S ESD protect 2KV (HBM)
SSF2814EH2
Marking and pin
Assignment
Schematic diagram
Description:
The SSF2814EH2 series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s)
Max.
8
6.2
25
2
0.5
20
± 10
-55 to +150
Typ.
Max.
90
Units
A
W
W/°C
V
V
°C
Units
/W
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 1 of 7

1 Page





SSF2814EH2 pdf, ピン配列
Test circuits and Waveforms
EAS Test Circuit:
SSF2814EH2
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes:
Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 3 of 7


3Pages


SSF2814EH2 電子部品, 半導体
Ordering and Marking Information
Device Marking: 2814EH2
Package (Available)
TSSOP-8
Operating Temperature Range
C : -55 to 150 ºC
SSF2814EH2
Devices per Unit
Package Units/
Type
Tube
TSSOP-8 3000
Tubes/Inner
Box
2
Units/Inner
Box
6000
Inner
Boxes/Carton
Box
8
Units/Carton
Box
48000
Reliability Test Program
Test Item
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Conditions
Tj=125to 150@
80% of Max
VDSS/VCES/VR
Tj=150@ 100% of
Max VGSS
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours 3 lots x 77 devices
500 hours
1000 hours
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 6 of 7

6 Page



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部品番号部品説明メーカ
SSF2814EH2

MOSFET ( Transistor )

Silikron Semiconductor
Silikron Semiconductor


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