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SSF2814EH2のメーカーはSilikron Semiconductorです、この部品の機能は「MOSFET ( Transistor )」です。 |
部品番号 | SSF2814EH2 |
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部品説明 | MOSFET ( Transistor ) | ||
メーカ | Silikron Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとSSF2814EH2ダウンロード(pdfファイル)リンクがあります。 Total 7 pages
Main Product Characteristics:
VDSS
RDS(on)
ID
20V
14mΩ (typ.)
8A①
Features and Benefits:
TSSOP-8
Advanced MOSFET process technology
Ultra low on-resistance with low gate charge
High Power and current handing capability
150℃ operating temperature
G/S ESD protect 2KV (HBM)
SSF2814EH2
Marking and pin
Assignment
Schematic diagram
Description:
The SSF2814EH2 series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s) ④
Max.
8①
6.2 ①
25
2
0.5
20
± 10
-55 to +150
Typ.
—
Max.
90
Units
A
W
W/°C
V
V
°C
Units
℃/W
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 1 of 7
1 Page Test circuits and Waveforms
EAS Test Circuit:
SSF2814EH2
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 3 of 7
3Pages Ordering and Marking Information
Device Marking: 2814EH2
Package (Available)
TSSOP-8
Operating Temperature Range
C : -55 to 150 ºC
SSF2814EH2
Devices per Unit
Package Units/
Type
Tube
TSSOP-8 3000
Tubes/Inner
Box
2
Units/Inner
Box
6000
Inner
Boxes/Carton
Box
8
Units/Carton
Box
48000
Reliability Test Program
Test Item
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Conditions
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
Tj=150℃@ 100% of
Max VGSS
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours 3 lots x 77 devices
500 hours
1000 hours
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 6 of 7
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ SSF2814EH2 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
SSF2814EH2 | MOSFET ( Transistor ) | Silikron Semiconductor |