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PDF SSF2810EH2 Data sheet ( Hoja de datos )
| Número de pieza | SSF2810EH2 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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Main Product Characteristics:
VDSS
RDS(on)
ID
20V
10mΩ (typ.)
8A①
Features and Benefits:
TSSOP-8
Advanced MOSFET process technology
Ultra low on-resistance with low gate charge
High Power and current handing capability
150℃ operating temperature
G/S ESD protect 2KV (HBM)
SSF2810EH2
Marking and pin
Assignment
Schematic diagram
Description:
The SSF2810EH2 series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s) ④
Max.
8①
6.2 ①
25
2
0.5
20
± 10
-55 to +150
Typ.
—
Max.
90
Units
A
W
W/°C
V
V
°C
Units
℃/W
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 1 of 7
1 page  
Mechanical Data：
TSSOP-8 Dimensions in Millimeters (UNIT:mm)
SSF2810EH2
NOTES：
1. All dimensions are in millimeters.
2. Dimensions are inclusive of plating
3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be
less than 6 mils.
4. Dimension L is measured in gauge plane.
5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
page 5 of 7
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| PDF Descargar | [ Datasheet SSF2810EH2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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