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Número de pieza | SSF26NS60 | |
Descripción | N-Channel MOSFET | |
Fabricantes | GOOD-ARK | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF26NS60 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Main Product Characteristics
VDSS
600V
RDS(on) 0.135Ω(typ.)
ID 20A
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Lead free product
TO-220
SSF26NS60
600V N-Channel MOSFET
Marking and Pin
Assignment
Schematic Diagram
Description
The SSF26NS60 series MOSFET is a new technology, which combines an innovative super
junction technology and advance process. This new technology achieves low RDS (ON), energy
saving, high reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=13.8mH
Avalanche Current @ L=13.8mH
Operating Junction and Storage Temperature Range
Max.
20
13
80
208
1.66
600
± 30
248
6
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
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Page 1 of 7
Rev.1.4
1 page SSF26NS60
600V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
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Page 5 of 7
Rev.1.4
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet SSF26NS60.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSF26NS60 | MOSFET ( Transistor ) | Silikron Semiconductor |
SSF26NS60 | N-Channel MOSFET | GOOD-ARK |
SSF26NS60A | MOSFET ( Transistor ) | Silikron Semiconductor |
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