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PDF SSF26NS60A Data sheet ( Hoja de datos )
| Número de pieza | SSF26NS60A | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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Main Product Characteristics
VDSS
600V
RDS(on) 0.135Ω(typ.)
ID 20A
D2PAK
SSF26NS60A
Marking and Pin
Assignment
Schematic Diagram
Features and Benefits
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Description
The SSF26NS60A series MOSFETs is a new technology, which combines an innovative
technology and advance process. This new technology achieves low Rdson, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=13.8mH
Avalanche Current @ L=13.8mH
Operating Junction and Storage Temperature Range
Max.
20
13
80
208
1.66
600
± 30
248
6
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2014.3.27
www.silikron.com
Version : 1.0
page 1 of 8
1 page  
Typical electrical and thermal characteristics
SSF26NS60A
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
©Silikron Semiconductor CO.,LTD.
2014.3.27
www.silikron.com
Version : 1.0
page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSF26NS60A.PDF ] | |
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