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PDF SSF2616E Data sheet ( Hoja de datos )
| Número de pieza | SSF2616E | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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DESCRIPTION
The SSF2616E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
SSF2616E
GENERAL FEATURES
● VDS = 20V,ID = 7A
RDS(ON) < 30mΩ @ VGS=2.5V
RDS(ON) < 26mΩ @ VGS=3.1V
RDS(ON) < 23mΩ @ VGS=4V
RDS(ON) < 22mΩ @ VGS=4.5V
ESD Rating：2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF2616E
SSF2616E
SOP-8
Ø330mm
Tape width
12mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
20
±12
7
5
25
1.5
-55 To 150
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
83 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.1
1 page  
SSF2616E
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
5
http://www.silikron.com
v1.1
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSF2616E.PDF ] | |
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