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AP50T10AGI-HF の電気的特性と機能

AP50T10AGI-HFのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL ENHANCEMENT MODE POWER MOSFET」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP50T10AGI-HF
部品説明 N-CHANNEL ENHANCEMENT MODE POWER MOSFET
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP50T10AGI-HF Datasheet, AP50T10AGI-HF PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP50T10AGI-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
AP50T10A series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220CFM package is widely preferred for all
commercial-industrial through hole applications. The mold
compound provides a high isolation voltage capability and low
thermal resistance between the tab and the external heat-sink.
BVDSS
RDS(ON)
ID
100V
33mΩ
34A
GD S
TO-220CFM(I)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS Drain-Source Voltage
100 V
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
Gate-Source Voltage
Drain Current, VGS @ 10V3
Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
+20
34
21.6
80
31.3
V
A
A
A
W
PD@TA=25
TSTG
TJ
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
1.92
-55 to 150
-55 to 150
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
4
65
Units
/W
/W
1
201501292

1 Page





AP50T10AGI-HF pdf, ピン配列
100
T C = 25 o C
10V
8.0V
80 7.0V
60
6.0V
40
20
V G = 5.0V
0
8.0V0 4 8 12 16
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
60
I D =16A
T C =25 o C
50
40
30
20
4 6 8 10
V GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
16
12
T j =150 o C
T j =25 o C
8
4
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP50T10AGI-HF
80
T C = 150 o C
60
40
20
10V
8.0V
7.0V
6.0V
V G = 5.0V
0
8.0V0 4 8 12 16 20
V DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.4
I D =16A
V G =10V
2.0
1.6
1.2
0.8
0.4
-50 0 50 100
T j , Junction Temperature ( o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I D =250uA
1.6
150
1.2
0.8
0.4
0
-50 0 50 100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
3


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共有リンク

Link :


部品番号部品説明メーカ
AP50T10AGI-HF

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics
Advanced Power Electronics


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