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AP40G120WのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | AP40G120W |
| |
部品説明 | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
このページの下部にプレビューとAP40G120Wダウンロード(pdfファイル)リンクがあります。 Total 3 pages
Advanced Power
Electronics Corp.
Features
▼ Advanced IGBT Technology
▼ Low Saturation Voltage
VCE(sat)=3.15V@IC=40A
▼ Industry Standard TO-3P Package
G
C
E
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE
IC@TC=25℃
IC@TC=100℃
ICM
PD@TC=25℃
TSTG
TJ
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current1
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 10 seconds .
Notes:
1.Pulse width limited by max. junction temperature .
AP40G120W
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
C VCES
IC
TO-3P
G
Rating
1200
+20
80
40
160
208
-55 to 150
-55 to 150
300
1200V
40A
C
E
Units
V
V
A
A
A
W
℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Value
0.6
40
Units
℃/W
℃/W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
IGES
ICES
VCE(sat)
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Cres
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGE=+20V, VCE=0V
VCE=1200V, VGE=0V
VGE=15V, IC=40A
VGE=15V, IC=50A
VCE=VGE, IC=250uA
IC=40A
VCC=500V
VGE=15V
VCC=600V,
Ic=40A,
VGE=15V,
RG=5Ω,
Inductive Load
VGE=0V
VCE=30V
f=1.0MHz
Min. Typ. Max. Units
- - +100 nA
- - 500 uA
- 3.15 3.4 V
- 3.2 3.71 V
3 - 7V
- 160 260 nC
- 25 - nC
- 90 - nC
- 35 - ns
- 30 - ns
- 150 -
ns
- 260 520 ns
- 1.7 - mJ
- 3 - mJ
- 3030 4800 pF
- 205 -
pF
- 15 - pF
Data and specifications subject to change without notice
1
201104072
1 Page 1000
100
10
V GE =15V
T j =150 o C
1
10 100 1000
V CE , Collector-Emitter Voltage(V)
Fig 7. Rever Bias SOA
10000
20
T C =25 o C
15
I C = 80 A
40 A
20 A
10
5
0
0 4 8 12 16
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
20
250
200
150
100
50
0
0 50 100 150
Junction Temperature ( ℃ )
200
Fig11. Power Dissipation vs. Junction
Temperature
AP40G120W
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.00001
Single Pulse
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
t , Pulse Width (s)
0.1
1
Fig 8. Effective Transient Thermal
Impedance
20
TC=150oC
15
IC=80A
40A
20 A
10
5
0
0 4 8 12 16
V GE , Gate-Emitter Voltage(V)
Fig 10. Saturation Voltage vs. VGE
20
16
I C = 4 0A
12 V CC =300V
V CC =400V
V CC =500V
8
4
0
0 40 80 120 160
Q G , Gate Charge (nC)
Fig 12. Gate Charge Characterisitics
3
3Pages | |||
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部品番号 | 部品説明 | メーカ |
AP40G120W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics |