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PDF AP30T10GS-HF Data sheet ( Hoja de datos )

Número de pieza AP30T10GS-HF
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP30T10GS-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
AP30T10GS-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
Simple Drive Requirement
Lower Gate Charge
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
D
S
Description
AP30T10 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-263 package is widely preferred for all commercial-
industrial surface mount applications using infrared reflow
technique and suited for high current application due to the low
connection resistance.
BVDSS
RDS(ON)
ID
100V
55mΩ
19A
G D S TO-263(S)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
VGS
ID@TC=25
ID@TC=100
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Drain Current, VGS @ 10V
Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
100
+20
19
12
60
44.6
3.13
-55 to 150
-55 to 150
V
V
A
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
Data and specifications subject to change without notice
Value
2.8
40
Units
/W
/W
1
201501272

1 page




AP30T10GS-HF pdf
MARKING INFORMATION
AP30T10GS-HF
30T10GS
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
YLast Digit Of The Year
WWWeek
SSSSequence
5

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