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AP30G100WのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR」です。 |
部品番号 | AP30G100W |
| |
部品説明 | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | ||
メーカ | Advanced Power Electronics | ||
ロゴ | |||
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Advanced Power
Electronics Corp.
AP30G100W
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
▼ High speed switching
▼ Low Saturation Voltage
VCE(sat)=3.0V@IC=30A
▼ Industry Standard TO-3P Package
▼ RoHS Compliant
G
C
E
TO-3P
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE
IC@TC=25℃
IC@TC=100℃
ICM
PD@TC=25℃
TSTG
TJ
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current1
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
Notes:
1.Repetitive rating : Pulse width limited by max . junction temperature .
VCES
IC
G
Rating
1000
±30
60
30
120
208
-55 to 150
-55 to 150
300
1000V
30A
C
E
Units
V
V
A
A
A
W
℃
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Value
0.6
40
Units
℃/W
℃/W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVCES
IGES
ICES
VCE(sat)
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Collect-to-Emitter Breakdown Voltage
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
VGE=0V, IC=250uA
VGE=±30V, VCE=0V
VCE=1000V, VGE=0V
VGE=15V, IC=30A
VGE=15V, IC=60A
VCE=VGE, IC=1mA
IC=30A
VCC=500V
VGE=15V
VCC=500V,
Ic=30A,
VGE=15V,
RG=5Ω,
Inductive Load
Eoff Turn-Off Switching Loss
Cies Input Capacitance
Coes Output Capacitance
VGE=0V
VCE=30V
Cres Reverse Transfer Capacitance
f=1.0MHz
Min.
1000
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
3
3.8
4.4
55
12
27
30
40
105
290
1.2
1.7
1320
105
9
Max.
-
±500
1
3.6
-
7
88
-
-
-
-
-
440
-
-
2110
-
-
Units
V
nA
mA
V
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
Data and specifications subject to change without notice
200828071-1/3
1 Page 1000
V GE =15V
T C =125 o C
100
10
Safe Operating Area
1
1 10 100 1000
V CE , Collector-Emitter Voltage(V)
Fig 7. Turn-off SOA
10000
20
T C =25 o C
15
10
I C = 60 A
30 A
15 A
5
0
0 4 8 12 16
V GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. VGE
20
250
200
150
100
50
0
0 50 100 150 200
Junction Temperature ( ℃ )
Fig11. Power Dissipation vs. Junction
Temperature
AP30G100W
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Pulse Width (s)
1
Fig 8. Effective Transient Thermal
Impedance
20
TC=150oC
15
I C = 60 A
30 A
15 A
10
5
0
0 4 8 12 16
V GE , Gate-Emitter Voltage(V)
20
Fig 10. Saturation Voltage vs. VGE
20
I C = 3 0A
V CC =200V
16 V CC =300V
V CC =500V
12
8
4
0
0 20 40 60 80
Q G , Gate Charge (nC)
Fig 12. Gate Charge Characterisitics
3/3
3Pages | |||
ページ | 合計 : 4 ページ | ||
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PDF ダウンロード | [ AP30G100W データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
AP30G100W | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | Advanced Power Electronics |