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PDF AP28G45GEM Data sheet ( Hoja de datos )
| Número de pieza | AP28G45GEM | |
| Descripción | N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP28G45GEM
Pb Free Plating Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
▼ High Input Impedance
▼ High Pick Current Capability
▼ 3.3V Gate Drive
▼ Strobe Flash Applications
C
C
C
C
SO-8
G
E
E
E
VCE
ICP
G
450V
130A
C
E
Absolute Maximum Ratings
Symbol
Parameter
VCE
VGE
IGEP
ICP
PD@TC=25℃1
TSTG
TJ
Collector-Emitter Voltage
Gate-Emitter Voltage
Pulsed Gate-Emitter Voltage
Pulsed Collector Current, VGE @ 3.3V
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
450
±6
±8
130
2.5
-55 to 150
-55 to 150
Units
V
V
V
A
W
℃
℃
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max.
IGES
Gate-Emitter Leakage Current
VGE=± 6V, VCE=0V
ICES Collector-Emitter Leakage Current VCE=450V, VGE=0V
- - 10
- - 10
VCE(sat)
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Cies
Coes
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
VGE=3.3V, ICP=130A (Pulsed)
VCE=VGE, IC=250uA
IC=40A
VCE=360V
VGE=4.5V
VCC=200V
IC=15A
RG=10Ω
VGE=5V
VGE=0V
VCE=25V
- 3.8 6
- -1
- 74 120
-8-
- 34 -
- 20 -
- 100 -
- 400 -
-3-
- 3020 4830
- 220 -
Cres
RthJA1
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
- 50 -
- - 50
Units
uA
uA
V
V
nC
nC
nC
ns
ns
ns
µs
pF
pF
pF
℃/W
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board ; 125℃/W when mounted on Min. copper pad.
Data and specifications subject to change without notice
201117031
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet AP28G45GEM.PDF ] | |
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