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AP28G40GEO の電気的特性と機能

AP28G40GEOのメーカーはAdvanced Power Electronicsです、この部品の機能は「N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 AP28G40GEO
部品説明 N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
メーカ Advanced Power Electronics
ロゴ Advanced Power Electronics ロゴ 




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AP28G40GEO Datasheet, AP28G40GEO PDF,ピン配置, 機能
Advanced Power
Electronics Corp.
AP28G40GEO
RoHS-compliant Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
High Input Impedance
High Peak Current Capability
Low Gate Drive
Strobe Flash Applications
C
C
C
C
TSSOP-8
G
E
E
E
VCE
ICP
G
400V
150A
C
E
Absolute Maximum Ratings
Symbol
Parameter
VCE
VGEP
ICP
PD@TA=251
TSTG
TJ
Collector-Emitter Voltage
Peak Gate-Emitter Voltage
Pulsed Collector Current, VGE @ 2.5V
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
400
±6
150
1
-55 to 150
150
Units
V
V
A
W
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
IGES
Gate-Emitter Leakage Current
VGE=± 6V, VCE=0V
--
ICES Collector-Emitter Leakage Current VCE=400V, VGE=0V
--
VCE(sat)
Collector-Emitter Saturation Voltage VGE=2.5V, ICP=150A (Pulsed)
- 5.2
VGE(th)
Gate Threshold Voltage
VCE=VGE, IC=250uA
0.3 -
Qg Total Gate Charge
IC=40A
- 76
Qge Gate-Emitter Charge
VCE=200V
-4
Qgc Gate-Collector Charge
VGE=4V
- 26
td(on)
Turn-on Delay Time
VCC=320V
- 220
tr Rise Time
IC=160A
- 800
td(off)
Turn-off Delay Time
RG=10Ω
- 1.6
tf Fall Time
VGE=4V
- 1.5
Cies Input Capacitance
VGE=0V
- 4485
Coes Output Capacitance
VCE=30V
- 44
Cres
RthJA1
Reverse Transfer Capacitance f=1.0MHz
Thermal Resistance Junction-Ambient
- 40
--
Max.
±10
10
9
1.2
130
-
-
-
-
-
-
8240
-
-
125
Units
uA
uA
V
V
nC
nC
nC
ns
ns
µs
µs
pF
pF
pF
/W
Notes:
1.Surface mounted on 1 in2 copper pad of FR4 board, t=10s.
Data and specifications subject to change without notice
1
200805306

1 Page





AP28G40GEO pdf, ピン配列
f=1.0MHz
10000
Cies
1000
100
Coes
Cres
10
1 5 9 13 17 21 25 29 33 37
V CE , Collector-Emitter Voltage (V))
Fig 7. Typical Capacitance Characterisitics
AP28G40GEO
160
T C =70 o C
120
80
40
0
02468
V GE , Gate-to-Emitter Voltage (V)
Fig 8. Maximum Pulse Collector Current
RG G
+
- 4V
RC
C VCE
TO THE
OSCILLOSCOPE
VCC=320 V
E
VGE
VCE
90%
10%
VGE
td(on) tr
td(off) tf
Fig 9. Switching Time Test Circuit
VCE
C
G
TO THE
OSCILLOSCOPE
VCC=200V
VGE
E
+
1~3mA
-
IG
IC
Fig 11. Gate Charge Test Circuit
Fig 10. Switching Time Waveform
6
I CP =40A
5 V CE =200V
4
3
2
1
0
0 20 40 60 80 100
Q G , Gate Charge (nC)
Fig 12. Gate Charge Waveform
120
3


3Pages





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共有リンク

Link :


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