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PDF SSF3056C Data sheet ( Hoja de datos )
| Número de pieza | SSF3056C | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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Main Product Characteristics
SSF3056C
30V Complementary MOSFET (Preliminary)
NMOS
PMOS
VDSS
30V
-30V
RDS(on) 37mohm(typ.) 68mohm(typ.)
ID 5A
-4.5A
D1 S1
NMOS
D1 G1
D2 S2
PMOS
D2 G2
DFN2X3-8L
Schematic Diagram
Features and Benefits
Advanced trench MOSFET process technology
Special designed for buck-boost circuit, DSC, portable
devices and general purpose applications
Ultra low on-resistance with low gate charge
150℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others
applications.
Absolute Max Rating
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Continuous Drain Current, VGS @ 4.5V①
Continuous Drain Current, VGS @ 4.5V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature
Range
Max.
N-channel P-channel
5 -4.5
4.2 -3.4
18.8 -12.5
2.1 1.8
30 -30
± 12 ± 12
-55 to + 150 -55 to + 150
Units
A
W
V
V
°C
www.goodark.com
Page 1 of 5
Rev.1.0
1 page  
SSF3056C
30V Complementary MOSFET (Preliminary)
Ordering and Marking Information
Device Marking: 3056C
Package (Available)
DFN2X3-8L
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tubes/
Type
Tube Inner Box
DFN2*3-8L 3000pcs 10pcs
Units/
Inner Box
30000pcs
Inner Boxes/
Carton Box
4pcs
Units/
Carton Box
120000pcs
www.goodark.com
Page 5 of 5
Rev.1.0
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet SSF3056C.PDF ] | |
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