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PDF SSF3051G7 Data sheet ( Hoja de datos )
| Número de pieza | SSF3051G7 | |
| Descripción | P-Channel MOSFET | |
| Fabricantes | GOOD-ARK | |
| Logotipo |  |
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Main Product Characteristics
VDSS
-30V
RDS(on) 45mohm(typ.)
ID -4A
Features and Benefits:
SOT23-6
Advanced trench MOSFET process technology
Special designed for buttery protection, load
switching and general power management
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
SSF3051G7
30V P-Channel MOSFET
D
G
Marking and Pin
Assignment
S
Schematic Diagram
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buttery protection, power switching application and a wide variety of other
applications.
Absolute Max Rating
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
-30
±25
-4
-25
1.7
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Resistance
Thermal Resistance, Junction-to-Ambient (Note 2)
Thermal Resistance, Junction-to-Case(Note 2)
RθJA
RθJC
75 ℃/W
30 ℃/W
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Page 1 of 8
Rev.1.0
1 page  
SSF3051G7
30V P-Channel MOSFET
TJ-Junction Temperature(℃)
Figure 7: Power Dissipation
TJ-Junction Temperature(℃)
Figure 8： Drain Current
Figure 9： Gate Charge
Figure 10: Capacitance vs Vds
Figure 11: Safe Operation Area
Figure 12: Single Pulse Maximum Power Dissipation
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Page 5 of 8
Rev.1.0
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSF3051G7.PDF ] | |
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