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PDF SSF3610E Data sheet ( Hoja de datos )

Número de pieza SSF3610E
Descripción N-Channel MOSFET
Fabricantes GOOD-ARK 
Logotipo GOOD-ARK Logotipo



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No Preview Available ! SSF3610E Hoja de datos, Descripción, Manual

Main Product Characteristics
VDSS
25 V
RDS(on) 6.8 mΩ(typ.)
ID 18A
SOP-8
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
Lead free product
SSF3610E
25V N-Chanel MOSFET
SSF3610E
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Max.
18
72
3.1
25
± 12
-55 to +150
Symbol
RθJA
Characteristics
Junction-to-ambient (t ≤ 10s)
Typ.
Max.
40
Units
A
W
V
V
°C
Units
/W
www.goodark.com
Page 1 of 6
Rev.2.1

1 page




SSF3610E pdf
Mechanical Data
SOP-8 PACKAGE OUTLINE DIMENSION
SSF3610E
25V N-Chanel MOSFET
www.goodark.com
Page 5 of 6
Rev.2.1

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