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Número de pieza | SSF3610E | |
Descripción | N-Channel MOSFET | |
Fabricantes | GOOD-ARK | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF3610E (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Main Product Characteristics
VDSS
25 V
RDS(on) 6.8 mΩ(typ.)
ID 18A
SOP-8
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
SSF3610E
25V N-Chanel MOSFET
SSF3610E
Marking and Pin
Assignment
Schematic Diagram
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Max.
18
72
3.1
25
± 12
-55 to +150
Symbol
RθJA
Characteristics
Junction-to-ambient (t ≤ 10s) ④
Typ.
—
Max.
40
Units
A
W
V
V
°C
Units
℃/W
www.goodark.com
Page 1 of 6
Rev.2.1
1 page Mechanical Data
SOP-8 PACKAGE OUTLINE DIMENSION
SSF3610E
25V N-Chanel MOSFET
www.goodark.com
Page 5 of 6
Rev.2.1
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSF3610E.PDF ] |
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