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SSF3341LのメーカーはSilikron Semiconductorです、この部品の機能は「MOSFET ( Transistor )」です。 |
部品番号 | SSF3341L |
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部品説明 | MOSFET ( Transistor ) | ||
メーカ | Silikron Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとSSF3341Lダウンロード(pdfファイル)リンクがあります。 Total 7 pages
SSF3341L
DESCRIPTION
The SSF3341L uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch or in PWM applications.
GENERAL FEATURES
● VDS = -30V,ID = -4.2A
RDS(ON) < 120mΩ @ VGS=-2.5V
RDS(ON) < 65mΩ @ VGS=-4.5V
RDS(ON) < 50mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D
G
S
Schematic diagram
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
3341L
SSF3341L
SOT-23-3
Ø180mm
SOT-23-3 top view
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-30
±12
-4.2
-3.5
-30
1
-55 To 150
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
BVDSS
IDSS
IGSS
VGS=0V ID=-250μA
VDS=-24V,VGS=0V
VGS=±12V,VDS=0V
90 ℃/W
Min Typ Max Unit
-30 V
-1 μA
±100
nA
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v2.0
1 Page TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
SSF3341L
td(on)
VOUT
VIN
10%
ton
tr
td(off)
toff
tf
90%
INVERTED
10%
90%
10%
90%
50%
50%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
TJ-Junction Temperature(℃)
Figure 3 Power Dissipation
TJ-Junction Temperature(℃)
Figure 4 Drain Current
-Vds Drain-Source Voltage (V)
Figure 5 Output CHARACTERISTICS
-ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
©Silikron Semiconductor CO.,LTD.
3
http://www.silikron.com
v2.0
3Pages SSF3341L
SOT23-3 PACKAGE INFORMATION
NOTES:
1. Tolerance ±0.10mm (4 mil) unless otherwise specified
2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils.
3. Dimension L is measured in gauge plane.
4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
©Silikron Semiconductor CO.,LTD.
6
http://www.silikron.com
v2.0
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ SSF3341L データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
SSF3341 | MOSFET ( Transistor ) | Silikron Semiconductor |
SSF3341 | P-Channel MOSFET | GOOD-ARK |
SSF3341L | MOSFET ( Transistor ) | Silikron Semiconductor |
SSF3341L | P-Channel MOSFET | GOOD-ARK |