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PDF SSF3341 Data sheet ( Hoja de datos )
| Número de pieza | SSF3341 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSF3341 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Main Product Characteristics:
VDSS
RDS(on)
ID
-30V
42mΩ (typ.)
-4.2A ①
SOT-23
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF3341
D
G
Marking and pin
Assignment
S
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating: @TA=25℃ unless otherwise specified
Symbol
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
-4.2 ①
-3.5 ①
-30
1.4
-30
±12
-55 to +150
Units
A
W
V
V
°C
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s) ④
©Silikron Semiconductor CO.,LTD.
2013.03.06
www.silikron.com
Typ.
—
Max.
90
Units
°C /W
Version : 2.2
page 1 of 8
1 page  
Typical electrical and thermal characteristics
SSF3341
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6. Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.03.06
www.silikron.com
Version : 2.2
page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSF3341.PDF ] | |
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