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PDF SSF3416 Data sheet ( Hoja de datos )
| Número de pieza | SSF3416 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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SSF3416
DESCRIPTION
The SSF3416 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
● VDS = 30V,ID =9A
RDS(ON) < 30mΩ @ VGS=4.5V
RDS(ON) < 18.5mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D
G
S
Schematic diagram
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOT23-6 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
3416
SSF3416
SOT23-6
Ø180mm
Tape width
8mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID（25℃）
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID（70℃）
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
Limit
30
±20
9
7
40
2.5
-55 To 150
62.5
Unit
V
V
A
A
W
℃
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max
30
Unit
V
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.0
1 page  
SSF3416
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
5
http://www.silikron.com
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSF3416.PDF ] | |
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