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PDF SSF3056C Data sheet ( Hoja de datos )

Número de pieza SSF3056C
Descripción MOSFET ( Transistor )
Fabricantes Silikron Semiconductor 
Logotipo Silikron Semiconductor Logotipo



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No Preview Available ! SSF3056C Hoja de datos, Descripción, Manual

Main Product Characteristics:
NMOS
PMOS
VDSS
30V
-30V
RDS(on) 37mohm(typ.) 68mohm(typ.)
D1
NMOS
S1
D1 G1
D2 S2
PMOS
D2 G2
ID 5A
Features and Benefits:
-4.5A
DFN2X3-8L
Bottom View
Advanced trench MOSFET process technology
Special designed for buck-boost circuit, DSC, portable
devices and general purpose applications
Ultra low on-resistance with low gate charge
150operating temperature
SSF3056C
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others
applications
Absolute max Rating:
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Continuous Drain Current, VGS @ 4.5V
Continuous Drain Current, VGS @ 4.5V
Pulsed Drain Current
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature
Range
Max.
N-channel P-channel
5 -4.5
4.2 -3.4
18.8 -12.5
2.1 1.8
30 -30
±12 ±12
-55 to + 150 -55 to + 150
Units
A
W
V
V
°C
©Silikron Semiconductor CO.,LTD.
2011.07.15
www.silikron.com
Version : 1.0 preliminary
page 1 of 6

1 page




SSF3056C pdf
Ordering and Marking Information
Device Marking: 3056C
Package (Available)
DFN2X3-8L
Operating Temperature Range
C : -55 to 150 ºC
SSF3056C
Devices per Unit
Package Units/ Tubes/
Units/
Type
Tube Inner Box Inner Box
DFN2*3-8L 3000pcs 10pcs
30000pcs
Inner Boxes/
Carton Box
4pcs
Units/
Carton Box
120000pcs
©Silikron Semiconductor CO.,LTD.
2011.07.15
www.silikron.com
Version : 1.0 preliminary
page 5 of 6

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