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PDF SSF3604 Data sheet ( Hoja de datos )
| Número de pieza | SSF3604 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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SSF3604
DESCRIPTION
The SSF3604 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge .This
device is well suited for Power Management and
load switching applications common in Notebook
Computers and Portable Battery Packs.
GENERAL FEATURES
● VDS = 30V,ID =18.5A
RDS(ON) < 6.0mΩ @ VGS=4.5V
RDS(ON) < 4.5mΩ @ VGS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D
G
S
Schematic diagram
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3604
SSF3604
SOP-8
Ø330mm
SOP-8 top view
Tape width
12mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70℃)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
18.5
13
74
2.5
-55 To 150
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
50 ℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max
30
Unit
V
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.0
1 page  
SSF3604
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
©Silikron Semiconductor CO.,LTD.
5
http://www.silikron.com
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SSF3604.PDF ] | |
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