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PDF SSF3605S Data sheet ( Hoja de datos )

Número de pieza SSF3605S
Descripción MOSFET ( Transistor )
Fabricantes Silikron Semiconductor 
Logotipo Silikron Semiconductor Logotipo



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No Preview Available ! SSF3605S Hoja de datos, Descripción, Manual

Main Product Characteristics:
VDSS
RDS(on)
-30V
5.1mΩ(typ.)
ID -15A
SOP-8
Features and Benefits:
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
SSF3605S
D
G
S
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH
Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Max.
-15
-12.8
-120
3.1
-30
±25
180
60
-55 to +150
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s)
Typ.
Max.
40
Units
A
W
V
V
mJ
A
°C
Units
/W
©Silikron Semiconductor CO.,LTD.
2012.04.09
www.silikron.com
Version : 1.2(preliminary)
page 1 of 7

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SSF3605S pdf
Mechanical Data
SOP-8 PACKAGE OUTLINE DIMENSION
SSF3605S
©Silikron Semiconductor CO., LTD.
2012.04.09
www.silikron.com
Version: 1.2(preliminary)
page 5 of 7

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