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SSF3051G7 の電気的特性と機能

SSF3051G7のメーカーはSilikron Semiconductorです、この部品の機能は「MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 SSF3051G7
部品説明 MOSFET ( Transistor )
メーカ Silikron Semiconductor
ロゴ Silikron Semiconductor ロゴ 




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SSF3051G7 Datasheet, SSF3051G7 PDF,ピン配置, 機能
                                
Main Product Characteristics:
VDSS
-30V
RDS(on) 45mohm(typ.)
ID -4A
SOT23-6 
Features and Benefits:
„ Advanced trench MOSFET process technology
„ Special designed for buttery protection, load
switching and general power management
„ Ultra low on-resistance with low gate charge
„ Fast switching and reverse body recovery
„ 150operating temperature
SSF3051G7 
D
G
Marking and pin
Assignment 
S
Schematic diagram 
 
 
 
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buttery protection, power switching application and a wide variety of other
applications 
Absolute max Rating:
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
-30
±25
-4
-25
1.7
-55 To 150
Unit
V
V
A
A
W
Thermal Resistance
Thermal Resistance, Junction-to-Ambient (Note 2)
Thermal Resistance, Junction-to-Case(Note 2)
RθJA
RθJC
75 /W
30 /W
©Silikron Semiconductor CO.,LTD.
2011.10.25
www.silikron.com 
Version : 1.0
page 1 of 9

1 Page





SSF3051G7 pdf, ピン配列
                                
Test circuits and Waveforms
SSF3051G7 
Switch Waveforms:
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production testing.
©Silikron Semiconductor CO.,LTD.
2011.10.25
www.silikron.com 
Version :1.0
page 3 of 9


3Pages


SSF3051G7 電子部品, 半導体
                                
SSF3051G7 
 
 
 
 
 
 
 
 
 
 
 
 
  Figure 13: Normalized Maximum Transient Thermal Impedance
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
 
©Silikron Semiconductor CO.,LTD.
2011.10.25
www.silikron.com 
Version :1.0
page 6 of 9

6 Page



ページ 合計 : 9 ページ
 
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共有リンク

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部品番号部品説明メーカ
SSF3051G7

MOSFET ( Transistor )

Silikron Semiconductor
Silikron Semiconductor
SSF3051G7

P-Channel MOSFET

GOOD-ARK
GOOD-ARK


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