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Número de pieza | SSF3036C | |
Descripción | MOSFET ( Transistor ) | |
Fabricantes | Silikron Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSF3036C (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Main Product Characteristics:
NMOS
PMOS
VDSS
30V
-30V
RDS(on) 32.4mohm 61.6mohm
ID 4A -3.6A
Features and Benefits:
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
SSF3036C
DFN 3x2-8L
Bottom View
N-Channel Mosfet P-Channel Mosfet
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
IDM
VGS
PD @TC = 25°C
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Pulsed Drain Current ②
Gate to source voltage
Power Dissipation ③
Operating Junction and Storage Temperature Range
Max.
N-Channel
P-Channel
4 ① -3.6 ①
16 -14.4
±12 ±12
2.1 1.3
-55 to + 150 -55 to + 150
Units
A
V
W
°C
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 5s) ④
Typ.
—
N-channel
60
Max.
P-Channel
95
Units
℃/W
©Silikron Semiconductor CO.,LTD.
2012.02.02
www.silikron.com
Version : 1.0
page 1 of 6
1 page Ordering and Marking Information
Device Marking: 3036C
Package (Available)
DFN 3x2-8L
Operating Temperature Range
C : -55 to 150 ºC
SSF3036C
Devices per Unit
Package Units/T Tubes/Inner
Type
ube Box
DFN 3x2-8L 3000pcs
10pcs
Units/Inner
Box
30000pcs
Inner
Boxes/Carton
Box
4pcs
Units/Carton
Box
120000pcs
Reliability Test Program
Test Item Conditions
High
Tj=125℃ to 150℃ @
Temperature 80% of Max
Reverse
VDSS/VCES/VR
Bias(HTRB)
High
Tj=150℃ @ 100% of
Temperature Max VGSS
Gate
Bias(HTGB)
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
168 hours
500 hours
1000 hours
3 lots x 77 devices
©Silikron Semiconductor CO.,LTD.
2012.02.02
www.silikron.com
Version : 1.0
page 5 of 6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SSF3036C.PDF ] |
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