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PDF SSF3639C Data sheet ( Hoja de datos )
| Número de pieza | SSF3639C | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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SSF3639C
DESCRIPTION
The SSF3639C uses advanced trench
technology MOSFET to provide excellent
RDS(ON) and low gate charge. The
complementary MOSFET may be used
in power inverters, and other applications.
GENERAL FEATURES
●N-Channel
VDS = 30V,ID = 6.3A
RDS(ON) < 35.5mΩ @ VGS=4.5V
RDS(ON) < 22mΩ @ VGS=10V
●P-Channel
VDS = -30V,ID = -5A
RDS(ON) < 87mΩ @ VGS=-4.5V
RDS(ON) < 52mΩ @ VGS=-10V
●High Power and current handing capability
●Lead free product is acquired
●Surface Mount Package
N-channel P-channel
Schematic diagram
Marking and pin Assignment
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
3639C
SSF3639C
SOP-8
Ø330mm
Tape width
12mm
Quantity
2500 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TA=25℃
TA=70℃
ID
Pulsed Drain Current (Note 1)
IDM
Maximum Power Dissipation
TA=25℃
TA=70℃
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
N-Channel
30
±20
6.3
20
1.6
-55 To 150
P-Channel
-30
±20
-5
-20
2.0
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note2)
N-Ch
62.5
RθJA
P-Ch
℃/W
62.5
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSF3639C.PDF ] | |
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