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PDF SSPL1022 Data sheet ( Hoja de datos )

Número de pieza SSPL1022
Descripción N-Channel enhancement mode power field effect transistors
Fabricantes Silikron Semiconductor 
Logotipo Silikron Semiconductor Logotipo



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No Preview Available ! SSPL1022 Hoja de datos, Descripción, Manual

                                
Main Product Characteristics:
VDSS
100V
RDS(on) 21mohm(typ.)
ID 57A
Features and Benefits:
„ Advanced Process Technology
„ Special designed for PWM, load switching and
general purpose applications
„ Ultra low on-resistance with low gate charge
„ Fast switching and reverse body recovery
„ 175operating temperature
TO220 
SSPL1022 
 
Marking and pin
Assignment 
Schematic diagram 
 
 
 
Description:
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.14mH
Avalanche Current @ L=0.14mH
Operating Junction and Storage Temperature Range
Max.
57
40
228
200
1.3
100
± 20
286
64
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2011.09.25
www.silikron.com 
Version : 1.1
page 1 of 8

1 page




SSPL1022 pdf
                                
Typical electrical and thermal characteristics 
SSPL1022 
 
 
 
 
 
 
Figure 5. Maximum Drain Current Vs. Case
 
Temperature
 
 
 
 
 
 
 
 
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
 
 
 
 
 
  
 
 
  Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
 
 
 
 
 
©Silikron Semiconductor CO.,LTD.
2011.09.25
www.silikron.com 
Version : 1.1
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