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Número de pieza | SSPL1022 | |
Descripción | N-Channel enhancement mode power field effect transistors | |
Fabricantes | Silikron Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SSPL1022 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! Main Product Characteristics:
VDSS
100V
RDS(on) 21mohm(typ.)
ID 57A
Features and Benefits:
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
TO220
SSPL1022
Marking and pin
Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.14mH
Avalanche Current @ L=0.14mH
Operating Junction and Storage Temperature Range
Max.
57
40
228
200
1.3
100
± 20
286
64
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2011.09.25
www.silikron.com
Version : 1.1
page 1 of 8
1 page Typical electrical and thermal characteristics
SSPL1022
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2011.09.25
www.silikron.com
Version : 1.1
page 5 of 8
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet SSPL1022.PDF ] |
Número de pieza | Descripción | Fabricantes |
SSPL1022 | N-Channel enhancement mode power field effect transistors | Silikron Semiconductor |
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