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SSPL1010のメーカーはSilikron Semiconductorです、この部品の機能は「Schottky Barrier Rectifier ( Diode )」です。 |
部品番号 | SSPL1010 |
| |
部品説明 | Schottky Barrier Rectifier ( Diode ) | ||
メーカ | Silikron Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとSSPL1010ダウンロード(pdfファイル)リンクがあります。 Total 8 pages
Main Product Characteristics:
VDSS
100V
RDS(on) 8.9mohm(typ.)
ID 88A ①
Features and Benefits:
TO220
Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
SSPL1010
Marking and pin
Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.14mH
Avalanche Current @ L=0.14mH
Operating Junction and Storage Temperature Range
Max.
88 ①
63 ①
352
245
1.63
100
±20
700
100
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2011.12.01
www.silikron.com
Version : 1.0
page 1 of 8
1 Page Test circuits and Waveforms
SSPL1010
Switch Waveforms:
Notes:
①Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
©Silikron Semiconductor CO.,LTD.
2011.12.01
www.silikron.com
Version : 1.0
page 3 of 8
3Pages Mechanical Data:
TO220 PACKAGE OUTLINE DIMENSION_GN
E
SSPL1010
A
D
D1
b
ФP
ФP1
b1
ϴ1
ϴ2
L
D2
ϴ3
A1 ϴ4
Symbol
A
A1
b
b1
c
D
D1
D2
E
E1
ФP
ФP1
e
L
ϴ1
ϴ2
ϴ3
ϴ4
e
Dimension In Millimeters
Min Nom Max
-
2.200
-
1.270
-
-
-
-
9.900
-
1.300
2.400
1.270
1.370
0.500
15.600
28.700
9.150
10.000
10.160
-
2.600
-
1.470
-
-
-
-
10.100
-
- 3.600
-
1.500
2.54BSC
12.900
13.100
13.300
- 70 -
- 70 -
- 30 -
- 30 -
c E1
Dimension In Inches
Min Nom Max
-
0.087
-
0.050
-
-
-
-
0.390
-
0.051
0.094
0.050
0.054
0.020
0.614
1.130
0.360
0.394
0.400
-
0.102
-
0.058
-
-
-
-
0.398
-
- 0.142
-
0.059
0.1BSC
0.508
0.516
0.524
- 70 -
- 70 -
50 70 90
10 30 50
©Silikron Semiconductor CO.,LTD.
2011.12.01
www.silikron.com
Version : 1.0
page 6 of 8
6 Page | |||
ページ | 合計 : 8 ページ | ||
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PDF ダウンロード | [ SSPL1010 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
SSPL1010 | Schottky Barrier Rectifier ( Diode ) | Silikron Semiconductor |