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PDF SSMD60200CTF Data sheet ( Hoja de datos )
| Número de pieza | SSMD60200CTF | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSMD60200CTF (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SSMD60200CT/SSMD60200CTF
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
60A
200V
175℃
0.95V
Features and Benefits:
High Junction Temperature
High ESD Protection
High Forward & Reverse Surge capability
TO220
SSMD60200CT
TO220F
SSMD60200CTF
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
VRRM Peak Repetitive Reverse Voltage
VR(RMS)
IF(AV)
IFSM
RMS Reverse Voltage
Average Forward Current
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
TJ Maximum operation Junction Temperature Range
Tstg Storage Temperature Range
Value
200
140
60
300
0.5
-55~175
-55~175
Unit
V
V
A
A
A
℃
℃
Thermal Resistance
Symbol
Characterizes
RθJC Maximum Thermal Resistance Junction To
RθJC Case(per leg)
TO220
TO220F
Value
2
4
Unit
℃/W
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR Reverse Breakdown Voltage 200
V
VF Forward Voltage Drop
0.95
V
0.9
IR Leakage Current
0.1
mA
5
Test Condition
IR=0.5mA
IF=30A, TJ=25℃
IF=30A, TJ=125℃
VR=200V, TJ=25℃
VR=200V, TJ=125℃
©Silikron Semiconductor CO., LTD.
2012.3.13
www.silikron.com
Version: 1.0
page 1of6
1 page  
SSMD60200CT/SSMD60200CTF
Ordering and Marking Information
Device Marking: SSMD60200CT&SSMD60200CTF
Package (Available)
TO-220&TO220F
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Package Units/ Tubes/Inner
Type
Tube Box
TO220 50
TO220F 50
20
20
Units/Inner
Box
1000
1000
Inner
Boxes/Carton
Box
6
6
Units/
Carton
Box
6000
6000
Reliability Test Program
Test Item Conditions
High
Tj=125℃ to 175℃ @
Temperature 80% of Max
Reverse
VDSS/VCES/VR
Bias(HTRB)
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2012.3.13
www.silikron.com
Version: 1.0
page 5of6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSMD60200CTF.PDF ] | |
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