|
|
PDF SSMD3030CT Data sheet ( Hoja de datos )
| Número de pieza | SSMD3030CT | |
| Descripción | Schottky Barrier Rectifier ( Diode ) | |
| Fabricantes | Silikron Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de SSMD3030CT (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
SSMD3030CT/SSMD3030CTF
Main Product Characteristics:
IF
VRRM
Tj(max)
Vf(max)
30A
30V
150℃
0.49V
Features and Benefits:
High Junction Temperature
High ESD Protection
High Forward & Reverse Surge capability
TO220
SSMD3030CT
TO220F
SSMD3030CTF
Schematic Diagram
Description:
Schottky Barrier Rectifier designed for high frequency switch model power supplies such as adaptors and DC/DC
convertors; this product special design for high forward and reverse surge capability
Absolute Rating:
Symbol
Characterizes
VRRM Peak Repetitive Reverse Voltage
VR(RMS)
IF(AV)
IFSM
RMS Reverse Voltage
Average Forward Current
Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
IRRM Peak Repetitive Reverse Surge Current(Tp=2us)
TJ Maximum operation Junction Temperature Range
Tstg Storage Temperature Range
Value
30
21
30
200
2
-55~150
-55~150
Unit
V
V
A
A
A
℃
℃
Thermal Resistance
Symbol
Characterizes
RθJC Maximum Thermal Resistance Junction To
RθJC Case(per leg)
TO220
TO220F
Value
2
4
Unit
℃/W
℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
VR Reverse Breakdown Voltage 30
V
VF Forward Voltage Drop
0.49
V
0.45
IR Leakage Current
0.2
mA
20
Test Condition
IR=0.5mA
IF=15A, TJ=25℃
IF=15A, TJ=125℃
VR=30V, TJ=25℃
VR=30V, TJ=125℃
©Silikron Semiconductor CO., LTD.
2011.5.26
www.silikron.com
Version: 1.0(preliminary)
page 1of6
1 page  
Ordering and Marking Information
SSMD3030CT/SSMD3030CTF
Device Marking: SSMD3030CT/SSMD3030CTF
Package (Available)
TO-220/TO220F
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tubes/Inner
Type
Tube Box
TO220 50
TO220F 50
20
20
Units/In
ner
Box
1000
1000
Inner
Boxes/Carton
Box
6
6
Units/Carto
n
Box
6000
6000
Reliability Test Program
Test Item Conditions
High
Tj=125℃ to 175℃ @
Temperature 80% of Max
Reverse
VDSS/VCES/VR
Bias(HTRB)
Duration
168 hours
500 hours
1000 hours
Sample Size
3 lots x 77 devices
©Silikron Semiconductor CO., LTD.
2011.5.26
www.silikron.com
Version: 1.0(preliminary)
page 5of6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSMD3030CT.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| SSMD3030CT | Schottky Barrier Rectifier ( Diode ) | Silikron Semiconductor |
| SSMD3030CTF | Schottky Barrier Rectifier ( Diode ) | Silikron Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |