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PDF AP03N40AI-HF Data sheet ( Hoja de datos )

Número de pieza AP03N40AI-HF
Descripción N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Fabricantes Advanced Power Electronics 
Logotipo Advanced Power Electronics Logotipo



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No Preview Available ! AP03N40AI-HF Hoja de datos, Descripción, Manual

Advanced Power
Electronics Corp.
100% Avalanche Test
Fast Switching Characteristic
Simple Drive Requirement
RoHS Compliant & Halogen-Free
AP03N40AI-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D BVDSS
RDS(ON)
400V
2.6Ω
G ID 2.7A
S
Description
AP03N40A series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The TO-220CFM package is widely preferred for all commercial-
industrial through hole applications. The mold compound provides
a high isolation voltage capability and low thermal resistance
between the tab and the external heat-sink.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25
IDM
PD@TC=25
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V3
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
G
DS
TO-220CFM(I)
Rating
400
+20
2.7
10
27.8
1.92
-55 to 150
-55 to 150
Units
V
V
A
A
W
W
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
4.5
65
Unit
/W
/W
1
201303121

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