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PDF AP02N60H-H-HF Data sheet ( Hoja de datos )
| Número de pieza | AP02N60H-H-HF | |
| Descripción | N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
| Fabricantes | Advanced Power Electronics | |
| Logotipo |  |
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Advanced Power
Electronics Corp.
AP02N60H/J-H-HF
Halogen-Free Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ Simple Drive Requirement
▼ RoHS Compliant
G
D
S
Description
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for AC/DC converters. The
through-hole version (AP02N60J-H-HF) is available for low-profile
applications.
BVDSS
RDS(ON)
ID
700V
8.8Ω
1.4A
G D S TO-252(H)
G
DS
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
VDS Drain-Source Voltage
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
EAR
TSTG
TJ
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy2
Avalanche Current
Repetitive Avalanche Energy
Storage Temperature Range
Operating Junction Temperature Range
Rating
700
+30
1.4
0.9
5.6
39
0.31
49
1.4
0.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
℃
℃
Thermal Data
Symbol
Parameter
Rthj-c
Rthj-a
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)4
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data & specifications subject to change without notice
Value
3.2
62.5
110
Units
℃/W
℃/W
℃/W
1
200807222
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AP02N60H-H-HF.PDF ] | |
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