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IXTV102N20T PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTV102N20T
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTV102N20T Datasheet, IXTV102N20T PDF,ピン配置, 機能
Preliminary Technical Information
TrenchHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH102N20T
IXTQ102N20T
IXTV102N20T
VDSS =
ID25 =
RDS(on)
200
102
23
V
A
mΩ
Symbol
VDSS
VGSM
I
D25
ILRMS
IDM
I
AS
EAS
dv/dt
PD
TJ
TJM
Tstg
T
L
TSOLD
Md
F
C
Weight
Test Conditions
TJ = 25°C to 175°C
Transient
T = 25°C
C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
T = 25°C
C
TC = 25°C
IS IDM, di/dt 100 A/ms, VDD VDSS
TJ 175°C, RG = 2.5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-247 & TO-3P)
Mounting force (PLUS220)
TO-247
TO-3P
PLUS220
Maximum Ratings TO-247 (IXTH)
200 V
± 30
V
102 A
75 A
250 A
G
D
S
5A
1.2 J TO-3P (IXTQ)
7 V/ns
(TAB)
750 W
G
-55 ... +175
°C
D
175 °C
S
-55 ... +175
°C
300 °C
260 °C PLUS220 (IXTV)
1.13 / 10 Nm/lb.in.
11..65 / 2.5..14.6
6
5.5
4
N/lb.
g
g
g
G
D
S
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
(TAB)
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 1 mA
2.5 4.5 V
IGSS VGS = ± 20 V, VDS = 0 V
± 200 nA
I
DSS
V =V
DS DSS
VGS = 0 V
TJ = 150°C
5 μA
250 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Notes 1, 2
18 23 mΩ
Features
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z 175 °C Operating Temperature
Advantages
z Easy to mount
z Space savings
z High power density
© 2007 IXYS CORPORATION, All rights reserved
DS99821 (04/07)

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