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PDF IXTQ102N20T Data sheet ( Hoja de datos )
| Número de pieza | IXTQ102N20T | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Preliminary Technical Information
TrenchHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH102N20T
IXTQ102N20T
IXTV102N20T
VDSS =
ID25 =
RDS(on) ≤
200
102
23
V
A
mΩ
Symbol
VDSS
VGSM
I
D25
ILRMS
IDM
I
AS
EAS
dv/dt
PD
TJ
TJM
Tstg
T
L
TSOLD
Md
F
C
Weight
Test Conditions
TJ = 25°C to 175°C
Transient
T = 25°C
C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
T = 25°C
C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/ms, VDD ≤ VDSS
TJ ≤ 175°C, RG = 2.5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque (TO-247 & TO-3P)
Mounting force (PLUS220)
TO-247
TO-3P
PLUS220
Maximum Ratings TO-247 (IXTH)
200 V
± 30
V
102 A
75 A
250 A
G
D
S
5A
1.2 J TO-3P (IXTQ)
7 V/ns
(TAB)
750 W
G
-55 ... +175
°C
D
175 °C
S
-55 ... +175
°C
300 °C
260 °C PLUS220 (IXTV)
1.13 / 10 Nm/lb.in.
11..65 / 2.5..14.6
6
5.5
4
N/lb.
g
g
g
G
D
S
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
(TAB)
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
Characteristic Values
Min. Typ. Max.
200 V
VGS(th)
VDS = VGS, ID = 1 mA
2.5 4.5 V
IGSS VGS = ± 20 V, VDS = 0 V
± 200 nA
I
DSS
V =V
DS DSS
VGS = 0 V
TJ = 150°C
5 μA
250 μA
RDS(on)
VGS = 10 V, ID = 0.5 ID25, Notes 1, 2
18 23 mΩ
Features
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
z 175 °C Operating Temperature
Advantages
z Easy to mount
z Space savings
z High power density
© 2007 IXYS CORPORATION, All rights reserved
DS99821 (04/07)
1 page  
IXTH102N20T IXTQ102N20T IXTV102N20T
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
27
RG = 2.5Ω
26 VGS = 15V
VDS = 100V
25
24 I D = 102A
23
I D = 51A
22
21
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
34
t r td(on) - - - -
32 TJ = 125ºC, VGS = 15V
VDS = 100V
30
26
25
24
28 23
26 I D = 102A, 51A
24
22
21
22 20
20 19
2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
28 70
t f td(off) - - - -
27
TJ = 125ºC
RG = 2.5Ω, VGS = 15V
67
26
VDS = 100V
64
25 61
24 TJ = 25ºC
58
23 55
22 52
21 TJ = 25ºC
49
20 46
19
TJ = 125ºC
43
18 40
50 55 60 65 70 75 80 85 90 95 100 105
ID - Amperes
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
27
26
RG = 2.5Ω
25 VGS = 15V
VDS = 100V
24
TJ = 25ºC
23
22 TJ = 125ºC
21
50 55 60 65 70 75 80 85 90 95 100 105
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
26 75
25 70
24
I D = 51A
65
23 60
22 55
21
I D = 102A
50
20 t f td(off) - - - -
RG = 2.5Ω, VGS = 15V
19 VDS = 100V
45
40
18 35
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
75
160
70 t f
td(off) - - - -
65 TJ = 125ºC, VGS = 15V
60 VDS = 100V
150
140
130
55 120
50 I D = 51A, 102A
45
110
100
40 90
35 80
30 70
25 60
20 50
15 40
2 3 4 5 6 7 8 9 10
RG - Ohms
© 2007 IXYS CORPORATION, All rights reserved
IXYS REF: T_102N20T (7W) 4-13-07-A.xls
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTQ102N20T.PDF ] | |
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