|
|
PDF IXTH22N50P Data sheet ( Hoja de datos )
| Número de pieza | IXTH22N50P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IXTH22N50P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
PolarTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
PLUS220 (IXTV)
IXTV22N50P
IXTV22N50PS
IXTQ22N50P
IXTH22N50P
PLUS220SMD (IXTV_S)
VDSS = 500V
ID25 = 22A
≤RDS(on) 270mΩ
trr(typ) = 400ns
TO-3P (IXTQ)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
G
DS
D (TAB)
G
S
D (TAB)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
Maximum Ratings
500
500
± 30
± 40
V
V
V
V
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
22
50
22
750
10
350
-55 ... +150
A
A
A
mJ
V/ns
W
°C
150 °C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300 °C
260 °C
Mounting Torque (TO-247 & TO-3P)
1.13/10
Nm/lb.in.
Mounting Force (PLUS220)
11..65/2.5..14.6
N/lb.
PLUS220 types
TO-3P
TO-247
4.0 g
5.5 g
6.0 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 30V, VDS = 0V
IDSS VDS = VDSS, VGS= 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.5 V
± 100 nA
5 μA
50 μA
270 mΩ
© 2009 IXYS CORPORATION, All Rights Reserved
G
D
S
TO-247 (IXTH)
D (TAB)
D (TAB)
G = Gate D = Drain
S = Source TAB = Drain
Features
z International Standard Packages
z Avalanche Rated
z Fast Intrinsic Diode
z Low Package Inductance
Advantages
z High Power Density
z Easy to Mount
z Space Savings
Applications
z Switched-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
DS99351G(07/09)
1 page  
IXTV22N50P IXTV22N50PS
IXTQ22N50P IXTH22N50P
Fig. 7. Input Admittance
40
35
30
25 TJ = 125ºC
25ºC
- 40ºC
20
15
10
5
0
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
80
70
60
50
40
30 TJ = 125ºC
20 TJ = 25ºC
10
0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD - Volts
Fig. 8. Transconductance
40
TJ = - 40ºC
35
30
25ºC
25
125ºC
20
15
10
5
0
0 4 8 12 16 20 24 28 32 36
ID - Amperes
10
9 VDS = 250V
I D = 11A
8 I G = 10mA
7
Fig. 10. Gate Charge
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45 50
QG - NanoCoulombs
10,000
1,000
Fig. 11. Capacitance
f = 1 MHz
Ciss
100.0
10.0
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit
25µs
100µs
Coss
100
10
0
Crss
5 10 15 20 25 30 35 40
VDS - Volts
1.0
TJ = 150ºC
TC = 25ºC
Single Pulse
0.1
10
100
VDS - Volts
1ms
10ms
DC 100ms
1000
© 2009 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXTH22N50P.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IXTH22N50P | Power MOSFET ( Transistor ) | IXYS |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |