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PDF IXTP6N50P Data sheet ( Hoja de datos )
| Número de pieza | IXTP6N50P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
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PolarHVTM
Power MOSFET
IXTA 6N50P
IXTP 6N50P
N-Channel Enhancement Mode
Avalanche Rated
VDSS = 500
ID25 = 6
RDS(on) ≤ 1.1
V
A
Ω
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25° C to 150° C
TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous
Transient
TC = 25° C
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C
TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS,
TJ ≤150° C, RG = 18 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Symbol
Test Conditions
(TJ = 25° C, unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 50µA
IGSS VGS = ±30 V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
Maximum Ratings
500 V
500 V
± 30 V
± 40 V
6A
15 A
6A
20 mJ
250 mJ
10 V/ns
100
-55 ... +150
150
-55 ... +150
300
260
W
°C
°C
°C
°C
°C
1.13/10 Nm/lb.in.
4g
3g
Characteristic Values
Min. Typ. Max.
500 V
3.0 5.0 V
±100 nA
5 µA
50 µA
1.1 Ω
TO-263 (IXTA)
GS
TO-220 (IXTP)
(TAB)
G DS
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
l International standard packages
l Unclamped Inductive Switching (UIS)
rated
l Low package inductance
- easy to drive and to protect
Advantages
l Easy to mount
l Space savings
l High power density
© 2006 IXYS All rights reserved
DS99447E(04/06)
1 page  
IXTA 6N50P
IXTP 6N50P
10.00
Fig. 13. Maxim um Transient Therm al Resistance
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
Pulse Width - milliseconds
1
10
© 2006 IXYS All rights reserved
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXTP6N50P.PDF ] | |
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