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IXTY1N80P の電気的特性と機能

IXTY1N80PのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTY1N80P
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTY1N80P Datasheet, IXTY1N80P PDF,ピン配置, 機能
Preliminary Technical Information
PolarTM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA1N80P
IXTP1N80P
IXTU1N80P
IXTY1N80P
VDSS =
ID25 =
RDS(on)
800V
1A
14Ω
TO-263 (IXTA)
TO-220 (IXTP)
TO-251 (IXTU)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
G
S
(TAB)
GD S
(TAB)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque
TO-263
TO-220
TO-252
TO-251
(TO-220)
Maximum Ratings
800
800
V
V
±20 V
±30 V
1A
2A
1A
75 mJ
5
42
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.50
3.00
0.35
0.40
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 50μA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
800 V
2.0 4.0 V
±100 nA
3 μA
30 μA
10 14 Ω
G
D
S
(TAB)
TO-252 (IXTY)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Packages
z Fast Intrinsic Rectifier
z Avalanche Rated
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Switched-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2009 IXYS CORPORATION, All Rights Reserved
DS100112(02/09)

1 Page





IXTY1N80P pdf, ピン配列
Fig. 1. Output Characteristics
@ 25ºC
1.0
VGS = 10V
0.9 8V
7V
0.8
0.7
0.6 6V
0.5
0.4
0.3 5V
0.2
0.1
0.0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
VDS - Volts
Fig. 3. Output Characteristics
@ 125ºC
1.0
VGS = 10V
0.9 7V
0.8
0.7
6V
0.6
0.5
5V
0.4
0.3
0.2
0.1
0.0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 0.5A Value
vs. Drain Current
2.8
2.6 VGS = 10V
2.4
TJ = 125ºC
2.2
2.0
1.8
1.6
1.4
1.2 TJ = 25ºC
1.0
0.8
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
ID - Amperes
© 2009 IXYS CORPORATION, All Rights Reserved
IXTA1N80P IXTP1N80P
IXTU1N80P IXTY1N80P
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Fig. 2. Extended Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6V
5V
5 10 15 20 25
VDS - Volts
30
Fig. 4. RDS(on) Normalized to ID = 0.5A Value
vs. Junction Temperature
3.0
2.8 VGS = 10V
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
I D = 1A
I D = 0.5A
25 50 75 100
TJ - Degrees Centigrade
125
150
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150


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共有リンク

Link :


部品番号部品説明メーカ
IXTY1N80

High Voltage MOSFET

IXYS
IXYS
IXTY1N80P

Power MOSFET ( Transistor )

IXYS
IXYS


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