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IXTA1N80P PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXTA1N80P
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



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IXTA1N80P Datasheet, IXTA1N80P PDF,ピン配置, 機能
Preliminary Technical Information
PolarTM Power
MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA1N80P
IXTP1N80P
IXTU1N80P
IXTY1N80P
VDSS =
ID25 =
RDS(on)
800V
1A
14Ω
TO-263 (IXTA)
TO-220 (IXTP)
TO-251 (IXTU)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
G
S
(TAB)
GD S
(TAB)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque
TO-263
TO-220
TO-252
TO-251
(TO-220)
Maximum Ratings
800
800
V
V
±20 V
±30 V
1A
2A
1A
75 mJ
5
42
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.50
3.00
0.35
0.40
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 50μA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
800 V
2.0 4.0 V
±100 nA
3 μA
30 μA
10 14 Ω
G
D
S
(TAB)
TO-252 (IXTY)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International Standard Packages
z Fast Intrinsic Rectifier
z Avalanche Rated
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z Switched-Mode and Resonant-Mode
Power Supplies
z DC-DC Converters
z Laser Drivers
z AC and DC Motor Drives
z Robotics and Servo Controls
© 2009 IXYS CORPORATION, All Rights Reserved
DS100112(02/09)

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