DataSheet.jp

IXKC15N60C5 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXKC15N60C5
部品説明 Power MOSFET
メーカ IXYS
ロゴ IXYS ロゴ 



Total 4 pages
		

No Preview Available !

IXKC15N60C5 Datasheet, IXKC15N60C5 PDF,ピン配置, 機能
Advanced Technical Information
IXKC 15N60C5
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Ultra low gate charge
D
G
S
ID25 = 15 A
VDSS
= 600 V
RDS(on) max = 0.165 Ω
ISOPLUS220TM
G
D
S
E72873
q
isolated back
surface
MOSFET
Symbol
VDSS
VGS
ID25
ID90
EAS
EAR
dV/dt
Conditions
TVJ = 25°C
TC = 25°C
TC = 90°C
single pulse
repetitive
ID = 7.9 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings
600 V
± 20 V
15 A
11 A
522 mJ
0.79 mJ
50 V/ns
Symbol
RDSon
VGS(th)
IDSS
IGSS
Ciss
Coss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = 12 A
VDS = VGS; ID = 0.79 mA
VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
VGS = 0 V; VDS = 100 V
f = 1 MHz
TVJ = 25°C
TVJ = 125°C
VGS = 0 to 10 V; VDS = 400 V; ID = 12 A
VGS = 10 V; VDS = 400 V
ID = 12 A; RG = 3.3 Ω
150
2.5 3
10
2000
100
40
9
13
12
5
50
5
165 mΩ
3.5 V
1 µA
µA
100 nA
pF
pF
52 nC
nC
nC
ns
ns
ns
ns
1.1 K/W
Features
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
• Fast CoolMOS™ 1) power MOSFET 4th
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
Advantages
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
1) CoolMOSis a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209b
1-4

1 Page





ページ 合計 : 4 ページ
PDF
ダウンロード
[ IXKC15N60C5.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IXKC15N60C5

Power MOSFET

IXYS
IXYS

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap