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IXGN120N60A3 の電気的特性と機能

IXGN120N60A3のメーカーはIXYSです、この部品の機能は「IGBT ( Insulated Gate Bipolar Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXGN120N60A3
部品説明 IGBT ( Insulated Gate Bipolar Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXGN120N60A3 Datasheet, IXGN120N60A3 PDF,ピン配置, 機能
GenX3TM 600V IGBT
IXGN120N60A3
IXGN120N60A3D1
Ultra-low Vsat PT IGBTs for up to
5kHz switching
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC110
I
F110
I
CM
SSOA
(RBSOA)
PC
TJ
T
JM
T
stg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 110°C
TC = 25°C, 1ms
IXGN120N60A3D1
VGE= 15V, TVJ = 125°C, RG = 1.5Ω
Clamped Inductive Load
TC = 25°C
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque (M4)
60A3
E
60A3D1
Maximum Ratings
600 V
600 V
±20 V
±30 V
200 A
120 A
36 A
800 A
ICM = 200
@ VCES < 600
595
A
V
W
-55 ... +150
150
-55 ... +150
2500
3000
°C
°C
°C
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VGE(th)
IC = 500μA, VCE = VGE
ICES VCE = VCES, VGE = 0V, Note 3
TJ = 125°C
120N60A3
120N60A3D1
120N60A3
120N60A3D1
IGES
VCE(sat)
VCE = 0V, VGE = ±20V
IC = 100A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
3.0 5.0 V
50 μA
650 μA
1 mA
5 mA
±400 nA
1.20 1.35 V
VCES =
IC110 =
VCE(sat)
600V
120A
1.35V
SOT-227B, miniBLOC
E153432
E
G
E
C
G = Gate, C = Collector, E = Emitter
Either Emitter Terminal can be used as
Main or Kelvin Emitter
Features
Optimized for Low Conduction
Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Package
miniBLOC
UL Recognized
Aluminium Nitride Isolation
Isolation Voltage 3000 V~
Low VCE(sat) for Minimum On-State
Advantages
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
Inrush Current Protection Circuits
High Power Density
© 2009 IXYS CORPORATION, All Rights Reserved
DS99927B(02/09)

1 Page





IXGN120N60A3 pdf, ピン配列
200
180
160
140
120
100
80
60
40
20
0
0.0
Fig. 1. Output Characteristics
@ 25ºC
VGE = 15V
13V
11V
9V
7V
5V
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VCE - Volts
1.8
Fig. 3. Output Characteristics
@ 125ºC
200
VGE = 15V
180 13V
160
11V
9V
140
120
100 7V
80
60
40
5V
20
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
VCE - Volts
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
5
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
TJ = 25ºC
I C = 200A
100A
50A
6 7 8 9 10 11 12 13 14 15
VGE - Volts
IXGN120N60A3
IXGN120N60A3D1
Fig. 2. Extended Output Characteristics
@ 25ºC
350
300
VGE = 15V
11V
9V
250
200
7V
150
100
50
5V
0
012345678
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
1.4
VGE = 15V
1.3
I C = 200A
1.2
1.1
1.0
I C = 100A
0.9
0.8
0.7
-50
-25
I C = 50A
0 25 50 75 100 125 150
TJ - Degrees Centigrade
200
180
160
140
120
100
80
60
40
20
0
4.0
Fig. 6. Input Admittance
TJ = - 40ºC
25ºC
125ºC
4.5 5.0 5.5 6.0 6.5 7.0
VGE - Volts
7.5
© 2009 IXYS CORPORATION, All Rights Reserved


3Pages


IXGN120N60A3 電子部品, 半導体
Fig. 18. Inductive Turn-on
Switching Times vs. Gate Resistance
160
t r td(on) - - - -
140 TJ = 125ºC, VGE = 15V
VCE = 480V
120
I C = 100A
90
80
70
100 60
80 50
60
I C = 50A
40
40 30
20 20
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 20. Inductive Turn-on
Switching Times vs. Junction Temperature
110 48
100 t r
td(on) - - - -
RG = 1.5, VGE = 15V
90 VCE = 480V
80
70
I C = 100A
46
44
42
40
60 38
50 36
40 34
30
I C = 50A
32
20 30
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
IXGN120N60A3
IXGN120N60A3D1
Fig. 19. Inductive Turn-on
Switching Times vs. Collector Current
120 43
110 t r
td(on) - - - -
100 RG = 1.5, VGE = 15V
90 VCE = 480V
42
41
40
80
70 TJ = 25ºC, 125ºC
60
39
38
37
50 36
40 35
30 34
20 33
10 32
0 31
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: G_120N60A3(86)02-11-09-B

6 Page



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部品番号部品説明メーカ
IXGN120N60A3

IGBT ( Insulated Gate Bipolar Transistor )

IXYS
IXYS
IXGN120N60A3D1

IGBT ( Insulated Gate Bipolar Transistor )

IXYS
IXYS


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