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PDF IXGN100N170 Data sheet ( Hoja de datos )
| Número de pieza | IXGN100N170 | |
| Descripción | High Voltage IGBT | |
| Fabricantes | IXYS | |
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High Voltage
IGBT
IXGN100N170
VCES =
IC90 =
V ≤CE(sat)
1700V
95A
3.0V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
tsc
(SCSOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 1Ω
Clamped Inductive Load
VGE = 15V, VCE = 1250V, TJ = 125°C
RG = 10Ω, Non Repetitive
TC = 25°C
50/60Hz
IISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
E
Maximum Ratings
1700
1700
±20
±30
160
95
600
V
V
V
V
A
A
A
ICM = 200
@0.8 • VCES
10
A
μs
735
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 3mA, VGE = 0V
VGE(th)
IC = 8mA, VCE = VGE
ICES VCE = VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ±20V
VCE(sat)
IC = 100A, VGE = 15V, Note 1
Characteristic Values
Min. Typ. Max.
1700
V
3.0 5.0 V
50 μA
3 mA
±200 nA
2.5 3.0 V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z Optimized for Low Conduction and
Switching Losses
z Isolation Voltage 2500V~
z Short Circuit Capability
z International Standard Package
z High Current Handling Capability
Advantages
z High Power Density
z Low Gate Drive Requirement
Applications
z Power Inverters
z UPS
z Motor Drives
z SMPS
z PFC Circuits
z Welding Machines
© 2012 IXYS CORPORATION, All Rights Reserved
DS100091A(01/12)
1 page  
IXGN100N170
Fig. 12. Resistive Turn-on Rise Time
vs. Junction Temperature
320
RG = 1Ω, VGE = 15V
280 VCE = 850V
240
I C = 100A
200
160
120
80 I C = 50A
40
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 14. Resistive Turn-on Switching Times
vs. Gate Resistance
450
400 t r
td(on) - - - -
TJ = 125ºC, VGE = 15V
350 VCE = 850V
300
250
I C = 100A
200 I C = 50A
150
100
50
123456789
RG - Ohms
65
60
55
50
45
40
35
30
25
10
Fig. 16. Resistive Turn-off Switching Times
vs. Collector Current
1000
420
900
t f td(off) - - - -
400
RG = 1Ω, VGE = 15V
800
VCE = 850V
380
700 360
600
500
400 TJ = 25ºC
TJ = 125ºC
340
320
300
300 280
200 260
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 13. Resistive Turn-on Rise Time
vs. Collector Current
320
280 RG = 1Ω, VGE = 15V
VCE = 850V
240
200
TJ = 125ºC
160
TJ = 25ºC
120
80
40
50 55 60 65 70 75 80 85 90 95 100
IC - Amperes
Fig. 15. Resistive Turn-off Switching Times
vs. Junction Temperature
1000
900 t f
td(off) - - - -
RG = 1Ω, VGE = 15V
800 VCE = 850V
400
380
360
700 340
I C = 50A
600 320
500 300
400 280
I C = 100A
300 260
200 240
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times
vs. Gate Resistance
1100
1000
900
t f td(off) - - - -
TJ = 125ºC, VGE = 15V
VCE = 850V
800
900
800
700
600
700 I C = 50A
600
500 I C = 100A
500
400
300
400 200
300 100
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2012 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXG_100N170(9P)01-26-12-A
5 Page | ||
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| PDF Descargar | [ Datasheet IXGN100N170.PDF ] | |
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