DataSheet.jp

IXBF12N300 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXBF12N300
部品説明 Monolithic Bipolar MOS Transistor
メーカ IXYS
ロゴ IXYS ロゴ 



Total 5 pages
		

No Preview Available !

IXBF12N300 Datasheet, IXBF12N300 PDF,ピン配置, 機能
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
(Electrically Isolated Tab)
IXBF12N300
VCES =
IC110 =
VCE(sat)
3000V
11A
3.2V
Symbol Test Conditions
VCES
VCGR
VGES
VGEM
IC25
IC110
ICM
SSOA
(RBSOA)
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
VGE = 15V, TVJ = 125°C, RG = 20Ω
Clamped Inductive Load
PC
TJ
TJM
Tstg
TL
TSOLD
FC
VISOL
Weight
TC = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force
50/60Hz, 1 Minute
Maximum Ratings
3000
3000
V
V
± 20
± 30
V
V
26 A
11 A
98 A
ICM = 98
1500
A
V
125 W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300 °C
260 °C
20..120 / 4.5..27
4000
Nm/lb.in.
V~
5g
Symbol Test Conditions
Characteristic Values
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ. Max.
BVCES
IC = 250μA, VGE = 0V
3000
V
VGE(th)
IC = 250μA, VCE = VGE
3.0 5.0 V
ICES
VCE
=
0.8
VCES,
VGE
=
0V
Note
2,
TJ
=
125°C
25 μA
1 mA
IGES VCE = 0V, VGE = ± 20V
±100 nA
VCE(sat)
IC = IC90, VGE = 15V, Note 1
2.8 3.2 V
TJ = 125°C
3.5
V
ISOPLUS i4-PakTM
12
5
Isolated Tab
1 = Gate
2 = Emitter
5 = Collector
Features
z Silicon Chip on Direct-Copper Bond
(DCB) Substrate
z Isolated Mounting Surface
z 4000V~ Electrical Isolation
z High Blocking Voltage
z High Peak Current Capability
z Low Saturation Voltage
Advantages
z Low Gate Drive Requirement
z High Power Density
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z Capacitor Discharge Circuits
z Uninterrupted Power Supplies(UPS)
z Laser Drivers
z AC Switches
© 2012 IXYS CORPORATION, All Rights Reserved
DS100121B(06/12)

1 Page





ページ 合計 : 5 ページ
PDF
ダウンロード
[ IXBF12N300.PDF ]

共有リンク

Link :

おすすめデータシート

部品番号部品説明メーカ
IXBF12N300

Monolithic Bipolar MOS Transistor

IXYS
IXYS

www.DataSheet.jp    |   2019   |  メール    |   最新    |   Sitemap