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BYC5-600PのメーカーはNXP Semiconductorsです、この部品の機能は「Hyperfast power diode」です。 |
部品番号 | BYC5-600P |
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部品説明 | Hyperfast power diode | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBYC5-600Pダウンロード(pdfファイル)リンクがあります。 Total 11 pages
BYC5-600P
Hyperfast power diode
24 December 2014
Product data sheet
1. General description
Hyperfast power diode in a SOD59 package.
2. Features and benefits
• Low leakage current
• Low reverse recovery current
• Low thermal resistance
• Reduces switching losses in associated MOSFET or IGBT
3. Applications
• Half-bridge/full-bridge switched-mode power supplies
• Continuous Current Mode (CCM) Power Factor Correction (PFC)
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IF(AV)
average forward
current
δ = 0.5; Tmb ≤ 133 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
Static characteristics
VF
forward voltage
IF = 5 A; Tj = 25 °C; Fig. 6
IF = 5 A; Tj = 150 °C; Fig. 6
Dynamic characteristics
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
Min Typ Max Unit
- - 600 V
- - 5A
- 2.5 3.3 V
- 1.4 2.1 V
- 11 - ns
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1 Page NXP Semiconductors
BYC5-600P
Hyperfast power diode
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse voltage
VRWM
crest working reverse voltage
VR reverse voltage
DC
IF(AV)
average forward current
δ = 0.5; Tmb ≤ 133 °C; square-wave
pulse; Fig. 1; Fig. 2; Fig. 3
IFRM repetitive peak forward current δ = 0.5; tp = 25 µs; Tmb ≤ 133 °C;
square-wave pulse
IFSM
non-repetitive peak forward
tp = 10 ms; Tj(init) = 25 °C; sine-wave
current
pulse; Fig. 4
tp = 8.3 ms; Tj(init) = 25 °C; sine-wave
pulse; Fig. 4
Tstg storage temperature
Tj junction temperature
Min Max Unit
- 600 V
- 600 V
- 600 V
- 5A
- 10 A
- 60 A
- 65 A
-65 175 °C
- 175 °C
20
Ptot
(W)
16
12
8
aaa-015780
0.2
0.1
0.5
δ=1
15
Ptot
(W)
12
9
6
aaa-015782
a = 1.57
1.9
2.2
2.8
4.0
43
0
02468
IF(AV) (A)
IF(AV) = IF(RMS) × √δ
Vo = 1.801 V; Rs = 0.062 Ω
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
0
012345
IF(AV) (A)
a = form factor = I F(RMS) / IF(AV)
Vo = 1.801 V; Rs = 0.062 Ω
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYC5-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
3 / 11
3Pages NXP Semiconductors
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
VF
forward voltage
IF = 5 A; Tj = 25 °C; Fig. 6
IF = 5 A; Tj = 150 °C; Fig. 6
IR
reverse current
VR = 600 V; Tj = 25 °C
VR = 600 V; Tj = 150 °C
Dynamic characteristics
Qr
recovered charge
IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 125 °C; Fig. 7
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 25 °C; Fig. 7
IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 125 °C; Fig. 7
IF = 5 A; VR = 400 V; dIF/dt = 500 A/µs;
Tj = 25 °C; Fig. 7
IRM peak reverse recovery IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs;
current
Tj = 25 °C; Fig. 7
IF = 5 A; VR = 200 V; dIF/dt = 200 A/µs;
Tj = 125 °C; Fig. 7
BYC5-600P
Hyperfast power diode
Min Typ Max Unit
- 2.5 3.3 V
- 1.4 2.1 V
- - 10 µA
- - 0.6 mA
- 19 - nC
- 45 - nC
- 11 - ns
- 23 - ns
- 28 - ns
- 13 25 ns
- 1.7 - A
- 3.2 - A
BYC5-600P
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 December 2014
© NXP Semiconductors N.V. 2014. All rights reserved
6 / 11
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PDF ダウンロード | [ BYC5-600P データシート.PDF ] |
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BYC5-600P | Hyperfast power diode | NXP Semiconductors |